Fairchild FFPF08S60SN service manual

tm

May 2008

1. Cathode 2. Anode

1. Cathode 2. Anode

TO-220F-2L

FFPF08S60SN

STEALTH II Rectifier

FFPF08S60SN

Features

• High Speed Switching, trr < 25ns @ IF = 8A

• High Reverse Voltage and High Reliability

• RoHS compliant

Applications

• General Purpose

• Switching Mode Power Supply

• Boost Diode in continuous mode power factor corrections

• Power switching circuits

8A, 600V STEALTHTM II Rectifier

The FFPF08S60SN is STEALTH
characteristics. It is silicon nitride passivated ion-implanted epi­taxial planar construction.

This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica­tions. Their low stored charge and hyperfast soft recovery mini­mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.

TM

TM

II rectifier with soft recovery

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

R

I

F(AV)

I

FSM

T

J

, T

STG

Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 60oC 8 A
Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150

o

= 25

C unless otherwise noted

C

60 A

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

Maximum Thermal Resistance, Junction to Case 6.8

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

F08S60SN FFPF08S60SNTU TO220F-2L - - 50

o

o

C

C/W

©2008 Fairchild Semiconductor Corporation
FFPF08S60SN Rev. A

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FFPF08S60SN

Trr test circuit and waveform

Avalanch energy test circuit and waveform

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Min. Typ. Max. Units

I

= 8A

V

1

FM

I

1

RM

t

rr

t

rr

I

rr

S factor
Q

rr

t

rr

I

rr

S factor
Q

rr

W

AVL

Notes:

1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%

F

I

= 8A

F

V

= 600V

R

V

= 600V

R

IF = 1A, di/dt = 100A/μs, VR = 30V TC = 25oC-13-ns

IF = 8A, di/dt = 200A/μs, VR = 390V TC = 25oC

IF = 8A, di/dt = 200A/μs, VR = 390V TC = 125oC

Avalanche Energy ( L = 40mH) 10 - - mJ

T

C

T

C

T

C

T

C

= 25oC
= 125oC

= 25oC
= 125oC

-

-

-

-

-

-

-

-

-

-

-

-

2.7

2.1

15

2.5

0.4
19

32

3.8

0.7
62

3.4

-

-

-

100
500

25

-

-

-

-

-

-

-

V

μA

ns

A

nC

ns

A

nC

FFPF08S60SN Rev. A

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