Fairchild FFPF08S60S service manual
tm
FFPF08S60S
Stealth 2 Rectifier
FFPF08S60S Stealth 2 Rectifier
April 2007
Features
• High Speed Switching ( Max. trr<30ns @ IF=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
8A, 600V Stealth 2 Rectifier
The FFPF08S60S is stealth2 rectifier with soft recovery characteristics (t
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
<30ns). They has half the recovery time of hyperfast
rr
1
1. Cathode 2. Anode
2
Symbol Parameter Value Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Thermal Characteristics
Symbol Parameter Max Units
R
θJC
Package Marking and Ordering
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 95 °C8A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TC = 25°C unless otherwise noted
Maximum Thermal Resistance, Junction to Case 3.4 °C/W
80 A
Information
Device Marking Device Package Reel Size Tape Width Quantity
F08S60S FFPF08S60STU TO-220F-2L - - 50
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FFPF08S60S Rev. A
FFPF08S60S Stealth 2 Rectifier
Electrical Characteristics T
= 25°C unless otherwise noted
C
Parameter Conditions Min. Typ. Max Units
1
V
FM
1
I
RM
t
rr
trr
Irr
S factor
Q
rr
trr
Irr
S factor
Q
rr
W
AVL
IF = 8A
I
= 8A
F
VR = 600V
V
= 600V
R
= 25 °C
T
C
T
= 125 °C
C
= 25 °C
T
C
T
= 125 °C
C
-
-
-
-
2.1
1.6
2.6
-
-
-
100
500
IF =1A, di/dt = 100A/µs, VR= 30V TC = 25 °C- - 25 ns
IF =8A, di/dt = 200A/µs, VR = 390V TC = 25 °C-
-
-
-
IF =8A, di/dt = 200A/µs, VR= 390V TC = 125 °C-
-
-
-
19
2.2
0.6
21
58
4.3
1.3
125
30
-
-
-
-
-
-
-
Avalanche Energy (L = 40mH) 20 - - mJ
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
V
V
µA
µA
ns
A
nC
ns
A
nC
FFPF08S60S Rev. A
2 www.fairchildsemi.com
Loading...