Fairchild FFPF08H60S service manual
tm
FFPF08H60S
Hyperfast 2 Rectifier
FFPF08H60S Hyperfast 2 Rectifier
April 2007
Features
• High Speed Switching ( trr=45ns(Max.) @ IF=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( V
=2.1V(Max.) @ IF=8A )
F
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
8A, 600V Hyperfast 2 Rectifier
The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @
I
=8A). it has half the recovery time of ultrafast rectifier and is
F
silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
1
1. Cathode 2. Anode
2
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Thermal Characteristics
Symbol Parameter Max Units
R
θJC
Package Marking and Ordering
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 105 °C8A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
T
= 25°C unless otherwise noted
C
Maximum Thermal Resistance, Junction to Case 3.4 °C/W
60 A
Information
Device Marking Device Package Reel Size Tape Width Quantity
F08H60S FFPF08H60STU TO-220F - - 50
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FFPF08H60S Rev. A
FFPF08H60S Hyperfast 2 Rectifier
Electrical Characteristics T
= 25°C unless otherwise noted
C
Parameter Conditions Min. Typ. Max Units
1
V
FM
1
I
RM
t
rr
t
a
t
b
Q
rr
W
AVL
IF = 8A
I
= 8A
F
VR = 600V
V
= 600V
R
IF =1A, di/dt = 100A/µs, V
I
=8A, di/dt = 100A/µs, V
F
IF =8A, di/dt = 100A/µs, V
= 30V
CC
= 390V
CC
= 390V TC = 25 °C
CC
= 25 °C
T
C
T
= 125 °C
C
= 25 °C
T
C
T
= 125 °C
C
= 25 °C
T
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
16
18.6
2.1
1.7
100
200
35
45
-
-
-
Avalanche Energy (L = 40mH) 20 - - mJ
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
V
V
µA
µA
ns
ns
ns
ns
nC
FFPF08H60S Rev. A
2 www.fairchildsemi.com
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