Fairchild FFP30S60S service manual
tm
FFP30S60S
February 2012
STEALTH II Rectifier
TM
FFP30S60S
Features
• High Speed Switching, trr < 40ns @ IF = 30A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assigments
TO-220-2L
1. Cathode 2. Anode
30A, 600V STEALTHTM II Rectifier
The FFP30S60S is STEALTHTM II rectifier with soft recovery
charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
1. Cathode 2. Anode
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 103oC 30 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150
TC = 25oC unless otherwise noted
300 A
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 1.1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F30S60S FFP30S60STU TO-220-2L - - 50
©2012 Fairchild Semiconductor Corporation
FFP30S60S Rev.C0
o
C
o
C/W
www.fairchildsemi.com1
FFP30S60S
Electrical Characteristics
TC = 25oC unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
I
= 30A
VFM1
1
I
RM
t
rr
t
rr
I
rr
S factor
Q
rr
t
rr
I
rr
S factor
Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
F
IF = 30A
V
= 600V
R
= 600V
V
R
IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 25 35 ns
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 25oC
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
TC = 25oC
TC = 125oC
T
= 25oC
C
= 125oC
T
C
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
28
2.4
0.9
34
75
6.3
0.9
236
2.6
-
-
-
100
500
40
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
µA
ns
A
nC
ns
A
nC
FFP30S60S Rev.C0
www.fairchildsemi.com2
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