Fairchild FFP15S60S service manual

tm
FFP15S60S
October 2007
STEALTH II Rectifier
TM
FFP15S60S
Features
• High Speed Switching, trr < 35ns @ IF = 15A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO-220-2L
1. Cathode 2. Anode
15A, 600V STEALTHTM II Rectifier
The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epi­taxial planar construction.
This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica­tions. Their low stored charge and hyperfast soft recovery mini­mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
1. Cathode 2. Anode
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V Average Rectified Forward Current @ TC = 123oC 15 A Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave Operating and Storage Temperature Range -65 to +150
o
= 25
C unless otherwise noted
C
150 A
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 1.3
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F15S60S FFP15S60STU TO-220-2L - - 50
o
o
C
C/W
©2007 Fairchild Semiconductor Corporation FFP15S60S Rev. A
www.fairchildsemi.com1
FFP15S60S
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
I
= 15A
V
1
FM
I
1
RM
t
rr
t
rr
I
rr
S factor Q
rr
t
rr
I
rr
S factor Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
F
I
= 15A
F
V
= 600V
R
V
= 600V
R
IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 21 30 ns
IF = 15A, di/dt = 200A/µs, VR = 390V TC = 25oC
IF = 15A, di/dt = 200A/µs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
T
C
T
C
T
C
T
C
= 25oC = 125oC
= 25oC = 125oC
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
23
2.5
0.7 29
55
4.3
1.1
118
2.6
-
-
-
100 500
35
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
µA
ns
A
nC
ns
A
nC
FFP15S60S Rev. A
www.fairchildsemi.com2
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