
FFP15S60S
October 2007
STEALTH II Rectifier
TM
FFP15S60S
Features
• High Speed Switching, trr < 35ns @ IF = 15A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
TO-220-2L
1. Cathode 2. Anode
15A, 600V STEALTHTM II Rectifier
The FFP15S60S is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
1. Cathode 2. Anode
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 123oC 15 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150
o
= 25
C unless otherwise noted
C
150 A
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 1.3
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F15S60S FFP15S60STU TO-220-2L - - 50
o
o
C
C/W
©2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. A
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FFP15S60S
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
I
= 15A
V
1
FM
I
1
RM
t
rr
t
rr
I
rr
S factor
Q
rr
t
rr
I
rr
S factor
Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
F
I
= 15A
F
V
= 600V
R
V
= 600V
R
IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 21 30 ns
IF = 15A, di/dt = 200A/µs, VR = 390V TC = 25oC
IF = 15A, di/dt = 200A/µs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
T
C
T
C
T
C
T
C
= 25oC
= 125oC
= 25oC
= 125oC
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
23
2.5
0.7
29
55
4.3
1.1
118
2.6
-
-
-
100
500
35
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
µA
ns
A
nC
ns
A
nC
FFP15S60S Rev. A
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Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage
70
100
FFP15S60S
TC = 125oC
10
[A]
F
TC = 75oC
TC = 25oC
10
[µA]
R
1
TC = 125oC
TC =75oC
1
Reverse Current, I
Forward Current, I
0.1
01234
Forward Volta g e , VF [V]
0.1
0.01
TC = 25oC
10
100 200 300 400 500 600
Reverse Voltage, VR [V]
Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
180
150
120
90
Capacitances, Cj [pF]
60
Typical Capacitance
at 0V = 180 pF
60
[ns]
rr
50
40
30
Reverse Recovery Time, t
TC = 125oC
TC = 75oC
TC = 25oC
IF = 15A
30
0.1 1 10 100
Reverse Volta ge, VR [V]
20
100 200 300 400 500 600
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Figure 6. Forward Current Derating Curve
Current vs. di/dt
50
[A]
40
F(AV)
30
20
10
Average Forward Current, I
0
25 50 75 100 125 150
3
Case temperature, TC [oC]
DC
[A]
rr
Reverse Recovery Current, I
FFP15S60S Rev. A
7
6
TC = 125oC
5
4
TC = 75oC
3
TC = 25oC
2
IF = 15A
1
100 200 300 400 5 00 600
di/dt [A/µs]
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Mechanical Dimensions
FFP15S60S
TO-220-2L
FFP15S60S Rev. A
Dimensions in Millimeters
4
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FFP15S60S
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THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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As used herein:
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which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FFP15S60S Rev. A
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