Fairchild FFH30S60S service manual
tm
FFH30S60S
Stealth 2 Rectifier
FFH30S60S
September 2007
Features
• High Speed Switching, trr < 40ns @ IF = 30A
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
30A, 600V Stealth 2 Rectifier
The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Pin Assigments
TO-247-2L
1. Cathode 2. Anode
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forward Current @ TC = 102oC 30 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range -65 to +150
o
= 25
C unless otherwise noted
C
1. Cathode 2. Anode
300 A
o
C
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
Maximum Thermal Resistance, Junction to Case 1.1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F30S60S FFH30S60STU TO-247-2L - - 50
©2007 Fairchild Semiconductor Corporation
FFH30S60S Rev. A
o
C/W
www.fairchildsemi.com1
FFH30S60S
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
I
= 30A
V
1
FM
I
1
RM
t
rr
t
rr
I
rr
S factor
Q
rr
t
rr
I
rr
S factor
Q
rr
W
AVL
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
F
I
= 30A
F
V
= 600V
R
V
= 600V
R
IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 25 35 ns
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 25oC
IF = 30A, di/dt = 200A/µs, VR = 390V TC = 125oC
Avalanche Energy ( L = 40mH) 20 - - mJ
T
C
T
C
T
C
T
C
= 25oC
= 125oC
= 25oC
= 125oC
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.6
28
2.4
0.9
34
75
6.3
0.9
236
2.6
-
-
-
100
500
40
-
-
-
-
-
-
-
Test Circuit and Waveforms
V
µA
ns
A
nC
ns
A
nC
FFH30S60S Rev. A
www.fairchildsemi.com2
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