Fairchild FFB5551 service manual
FFB5551
Dual-Chip NPN General Purpose Amplifier
• This device is deisgned for general purpose high voltage amplifiers.
• E1 is Pin 1.
C1
B2
E2
E1
C2
B1
SC70-6
Mark: .P1
FFB5551
Absolute Maximum Ratings*
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
Collector-Emitter Voltage 160 V
Collector-Base Voltage 180 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V
Collector-Base BreakdownVoltage IC = 100µA, IE = 0 180 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
Collector Cut-off Current VCB = 120V, IE = 0
= 120V, IE = 0, TA = 100°C
V
CB
50
50
Emitter Cut-off Current VEB = 4.0V, IC = 0 50 nA
On Characteristics *
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
CE
V
(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
BE
DC Current Gain VCE = 5.0V, IC = 1.0mA
V
= 5.0V, IC = 10mA
CE
= 5.0V, IC = 50mA
V
CE
= 50mA, IB = 5.0mA
I
C
I
= 50mA, IB = 5.0mA
C
80
80
30
250
0.15
0.20
1.0
1.0
Small Signal Characteristics
f
T
Current gain Bandwidth Product VCE = 10V, IC = 10mA
100 300 MHz
f = 100MHz
C
obo
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF
nA
µA
V
V
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
FFB5551
Thermal Characteristics T
Symbol Parameter Max. Units
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 625 °C/W
=25°C unless otherwise noted
A
200
1.6
mW
mW/°C
©2003 Fairchild Semiconductor Corporation Rev. A, June 2003
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