FFB20UP30DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 45ns(@IF=10A)
• High Reverse Voltage : V
• Avalanche Energy Rated
• Planar Construction
Applications
• General purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
RRM
= 300V
FFB20UP30DN Ultrafast Recovery Power Rectifier
March 2006
1
1
1.Anode 2.Cathode 3.Anode
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 300 V
Working Peak Reverse Voltage 300 V
DC Blocking Voltage 300 V
Average Rectified Forward Current
Rating for each diode I
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TO-263AB/D2-PAK
= 25°C unless otherwise noted
C
/2 @ TC = 130°C
F(AV)
1. Anode 2. Cathode 3. Anode
2
20 A
180 A
3
Thermal Characteristics
Symbol Parameter Max Units
R
θJC
Maximum Thermal Resistance, Junction to Case 2.0 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
F20UP30DN FFB20UP30DNTM TO-263AB/D2-PAK 13” Dia - 800
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FFB20UP30DN Rev. A
FFB20UP30DN Ultrafast Recovery Power Rectifier
Electrical Characteristics (per diode) T
= 25°C unless otherwise noted
C
Symbol Parameter Min. Typ. Max. Units
V
FM *
I
RM *
t
rr
t
a
t
b
Q
rr
W
AVL
* Pulse Test: Pulse Width=300 µs, Duty Cycle=2%
IF = 10A
I
= 10A
F
VR = 300V
V
= 300V
R
IF =0.5A, Irr=1A, V
I
=1A, di/dt = 100A/µs, V
F
I
=10A, di/dt = 200A/µs, V
F
IF =10A, di/dt = 200A/µs, V
Avalanche Energy (L = 20mH) 20 - - mJ
CC
= 30V
CC
= 30V
= 195V
CC
= 195V TC = 25 °C
CC
= 25 °C
T
C
T
= 150 °C
C
= 25 °C
T
C
T
= 150 °C
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
-
-
-
-
-
-
-
-
-
-
11
13
20
-
-
-
-
-
-
-
1.3
1.2
1
500
30
35
45
-
-
-
Test Circuit and Waveforms
V
V
µA
µA
ns
ns
ns
ns
ns
nC
FFB20UP30DN Rev. A
2 www.fairchildsemi.com