查询FFAF10U20供应商查询FFAF10U20供应商
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
FFAF10U20DN
TO-220F
1 2 31 2 3
TO-3PF
FFAF10U20DN
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings (per diode) T
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 200 V
Average Rectified Forward Current @ TC = 100°C10 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Thermal Resistance, Junction to Case 4.0 °C/W
(per diode) TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Maximum Reverse Rec overy T ime
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
=10A, di/dt = 200A/µs)
(I
F
Avalanche Energy 0.5 - - mJ
= 10A
F
= 10A
F
@ rated V
TC = 25 °C
R
=25°°°°C unless otherwise noted
C
= 25 °C
T
C
T
= 100 °C
C
= 100 °C
T
C
-
-
-
-
-
-
-
100 A
-
-
-
-
-
-
-
1.2
1.0
10
100
35
2.5
45
V
µA
ns
A
nC
©2001 Fairchild Semiconductor Corporation
Rev. A, December 2001
Typical CharacteristicsTypical Characteristics
FFAF10U20DN
50
10
[A]
F
1
TC = 100oC
TC = 25oC
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
300
200
Typical Ca pacitance
at 0V = 286 pF
1000
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
0.001
0 50 100 150 200
TC = 100oC
TC = 25oC
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
[ns]
rr
35
30
IF = 10A
Tc = 25oC
Capacitance , Cj [pF]
100
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
6
IF = 10A
[A]
rr
5
4
3
2
1
TC = 25oC
Reverse Recovery Current , I
0
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
25
Reverse Recovery Time , t
20
100 500
di/dt [A/µs]
Figure 4. Typical Rever se Recovery Time
vs. di/dt
16
[A]
14
F(AV)
12
10
8
6
4
2
Average Forward Current , I
0
60 80 100 120 140 160
DC
Case Temperature , TC [oC]
Figure 6. Forward Current Derating Curve
©2001 Fairchild Semiconductor Corporation Rev. A, December 2001