Fairchild FFA60UP20DN service manual

FFA60UP20DN
Features
• Ultrafast with soft recovery = 1A), < 40ns
(@ I
F
• Reverse Voltage, 200V
• Forward Voltage (@ T
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supply
= 100°C), < 1V
C
FFA60UP20DN
Ultrafast Rectifier
TO-3PN
1 2 3
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 200 V Average Rectified Forward Current @ TC = 100°C30 A Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
(per diode) TC=25°C unless otherwise noted
300 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
t
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Thermal Resistance, Junction to Case 1.4 °C/W
(per diode) TC=25 °C unless otherwise noted
Maximum Instantaneous Forward Voltage I I
Maximum Instantaneous Reverse Current
Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge
=30A, di/dt = 200A/µs)
(I
F
Maximum Reverse Recovery Time
=1A, di/dt = 100A/µs)
(I
F
Avalanche Energy (L=40mH) 2 - - mJ
= 30A
F
= 30A
F
@ rated V
TC = 25 °C
R
T
= 25 °C
C
= 100 °C
T
C
= 100 °C
T
C
-
-
-
-
-
-
-
- - 40 ns
-
-
-
-
32
2.4
38.4
1.15
1.0
10
100
-
-
-
V
µA
ns
A
nC
Rev. A, August 2004©2004 Fairchild Semiconductor Corporation
Typical Characteristics
FFA60UP20DN
100
[A]
F
TC = 100oC
10
1
TC = 25oC
Forward Current , I
0.1
0.00.51.01.52.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
500
400
200
Capacitance , Cj [pF]
Typical Capacitance at 0V = 473.9 pF
10
A]
1
µ
[
R
0.1
0.01
TC = 100oC
TC = 25oC
Reverse Current , I
0.001 0 50 100 150 200
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
[ns]
rr
35
30
IF = 30A Tc = 25oC
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
6
5
[A]
rr
4
3
2
1
Reverse Recovery Curr e nt , I
0
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
©2004 Fairchild Semiconductor Corporation
IF = 30A TC = 25oC
Reverse Recovery Time , t
25
100 500
di/dt [A/µs]
Figure 4. Typical Reverse Recovery Time
vs. di/dt
35
[A]
30
F(AV)
25
20
15
10
5
Average Forward Current , I
0
60 80 100 120 140 160
DC
Case Temperature , TC [oC]
Figure 6. Forward Current Derating Curve
Rev. A, August 2004
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