Fairchild FEP16AT, FEP16JT service manual

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FEP16AT - FEP16JT

Discrete POWER & Signal

Technologies

FEP16AT - FEP16JT

0.185(4 .7 0)

0.175(4 .4 4)

0.025(0 .6 4)

0.014(0 .3 5)

0.11(2.79)

0.10(2.54)

Features

• Low forward voltage drop.

• High surge current capacity.

• High current capability.

• High reliability.

PIN 1

PIN 3

Positi v e CT

+

CASE

PIN 2

PIN 1

PIN 3

Nega tiv e CT
Suffix “A”

TO-220AB

Dimensions are in: inches (mm)

-

CASE

PIN 2

PIN 1

PIN 3

Doubler
Suffix “D”

AC

CASE

PIN 2

0.113(2.87)

0.103(2.62)

0.16(4.06)

0.14(3.56)

0.037(0.94)

0.027(0.68)

0.412(10.5)

MAX

2 3

1

0.594(15.1)

0.587(14.9)

0.105(2.67)

0.095(2.41)

0.154(3.91)

0.148(3.74)

0.27(6.86)

0.23(5.84)

0.5 6(1 4.22 )

0.5 3(1 3.46 )

16 Ampere Glass Passivated Super Fast Rectifiers

Absolute Maximum Ratings* T

Symbol P arameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient 15
Thermal Resistance, Junction to Lead 2.2
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150

= 25°C unless otherwise noted

A

= 100°C

A

16 A

200 A

8.33
66

mW/°C

°C/W
°C/W

W

°C
°C

0.055(1 .4 0)

0.045(1 .1 4)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT

Peak Repetitive Reverse Voltage 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage 35 70 105 140 210 280 350 420 V
DC Blocking Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R

Maximum Reverse Recovery Time
I

= 0.5 A, IR = 1.0 A, I

F

Maximum Forward Voltage @ 8.0A

Typical Junction Capacitance

= 4.0. f = 1.0 MHz

V

R

1999 Fairchild Semiconductor Corporation

TA = 25°C
T

= 100°C

A

= 0.25 A

RR

50 100 150 200 300 400 500 600 V

10

500

35 50

0.95 1.3 1.5

85 60

FEP16AT - FEP16JT, Rev. A

µ
µ

nS

pF

A
A

V

T ypical Characteristics

FEP16AT - FEP16JT

Forward Current Derating Curve

20

16

12

SINGLE PHASE
HALF WAVE

8

60HZ
RESISTIVE OR
INDUCTIVE LOAD

4

.375" (9.0 m m) LEAD

FORWARD CURRENT (A)

LENGTHS

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE ( C)

º

Forward Characteristics

100

FEP16AT-FEP16DT

10

1

0.1

FORWAR D CURRENT (A)

0.01

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

FORW ARD VOLT AGE (V)

FEP16FT-FEP16JT

º

T = 25 C

A

Pulse Wi dth = 300µs
2% Duty Cycle

Non-Repetitive Surge Current

200

160

120

80

40

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER O F CYC LES AT 60Hz

Reverse Characteristics

1000

µ

100

T = 100 C

º

10

1

REV ERS E C URRENT ( A)

0.1
0 20 40 60 80 100 120 140

PERCENT OF RATED PE AK REVER S E V OLTAGE (% )

A

T = 25 C

º

A

Junction Capacitance

100

90

80

70

60

FEP16AT-FEP16DT

CAPACITANCE (pF)

FEP16FT-FEP16JT

50

40

50

Ω

NONINDUCTIVE

50V
(approx)

50

Ω

NONINDUCTIVE

Ω

50
NONINDUCTIVE

DUT

1 2 5 10 20 50 100

OSCILLOSCOPE
(Note 1)

REVERSE VOLTAGE (V)

(-)

Pulse
Generator
(Note 2)

(+)

+0.5A

trr

0

-0.25A

-1.0A

1.0cm SET TIME BASE FOR

Reverse Recovery Time Characterstic and Test Circuit Diagram

5/ 10 ns/ cm

FEP16AT - FEP16JT, Rev. A