Fairchild FDZ661PZ service manual
FDZ661PZ
BOTTOM
TOP
D
S
S
G
Pin 1
Pin 1
WL-CSP 0.8X0.8 Thin
P-Channel 1.5 V Specified PowerTrench® Thin
-20 V, -2.6 A, 140 mΩ
December 2011
WL-CSP MOSFET
FDZ661PZ P-Channel 1.5 V Specified PowerTrench
Features
Max r
Max r
Max r
Max r
Occupies only 0.64 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
HBM ESD protection level > 2 kV (Note3)
RoHS Compliant
= 140 mΩ at VGS = -4.5 V, ID = -2 A
DS(on)
= 182 mΩ at VGS = -2.5 V, ID = -1.5 A
DS(on)
= 231 mΩ at VGS = -1.8 V, ID = -1 A
DS(on)
= 315 mΩ at VGS = -1.5 V, ID = -1 A
DS(on)
2
of PCB area. Less than 16% of the
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ661PZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile (0.4
mm) and small (0.8x0.8 mm
low r
DS(on)
.
2
) packaging, low gate charge, and
DS(on)
. This
Applications
Battery management
Load switch
Battery protection
®
Thin
WL-CSP MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Thermal Characteristics
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25 °C (Note 1a) -2.6
-Pulsed -10
Power Dissipation TA = 25 °C (Note 1a) 1.3
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (Note 1a) 93
Thermal Resistance, Junction to Ambient (Note 1b) 311
EH FDZ661PZ WL-CSP 0.8X0.8 Thin 7 ” 8 mm 5000 units
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 0.4
A
1
A
W
°C/W
www.fairchildsemi.com
FDZ661PZ P-Channel 1.5 V Specified PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= -250 μA, referenced to 25 °C -13 mV/°C
D
= 0 V -1 μA
GS
= 0 V ±6 μA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.3 -0.7 -1.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 μA, referenced to 25 °C 2.5 mV/°C
D
= -4.5 V, ID = -2 A 108 140
V
GS
V
= -2.5 V, ID = -1.5 A 129 182
GS
= -1.8 V, ID = -1 A 159 231
V
GS
= -1.5 V, ID = -1 A 201 315
V
GS
= -4.5 V, ID = -2 A, TJ =125°C 143 204
V
GS
Forward Transconductance VDD = -5 V, ID = -2 A 7.8 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 61 80 pF
Reverse Transfer Capacitance 53 70 pF
= -10 V, VGS = 0 V,
V
DS
f = 1 MHz
416 555 pF
mΩ
Thin
®
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 6.3 13 ns
Turn-Off Delay Time 68 108 ns
Fall Time 33 52 ns
Total Gate Charge
Gate to Source Charge 0.6 nC
Gate to Drain “Miller” Charge 1.7 nC
= -10 V, ID = -2.5 A,
V
DD
V
= -4.5 V, R
GS
= -4.5 V, VDD = -10 V,
V
GS
I
= -2.5 A
D
GEN
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mate rial. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 10 18 nC
a. 93 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
= 0 V, IS = -1.4 A (Note 2) -0.9 -1.2 V
GS
= -2.5 A, di/dt = 100 A/μs
I
F
= 6 Ω
4.9 10 ns
6.3 8.8 nC
29 46 ns
is guaranteed by design while R
θJC
b. 311 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
WL-CSP MOSFET
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
2
www.fairchildsemi.com
FDZ661PZ P-Channel 1.5 V Specified PowerTrench
0123
0
2
4
6
8
10
VGS = -1.5 V
VGS = -1.8 V
VGS = -4.5 V
VGS = -3 V
VGS = -2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
-I
D
, DRAIN CURRENT (A)
-VDS, DRA IN TO SOU RCE VOLTAG E (V)
0246810
0
1
2
3
VGS = -1.5 V
VGS = -3 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -2.5 V
VGS = -4.5 V
V
GS
= -1.8 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -2 A
V
GS
= -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTI ON TEMPERATURE (
o
C)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
150
300
450
600
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
T
J
= 25
o
C
ID = -2 A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
-VGS, GATE TO SO URCE VOLTAGE (V)
0 0.5 1.0 1.5 2.0 2.5
0
2
4
6
8
10
TJ = 25 oC
V
DS
= -5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 150 oC
-I
D
, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE V OLTAGE (V)
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
-I
S
, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor m a lized On-Res i s t ance vs
Drain Current and Gate Voltage
Thin
®
Figur e 3 . N ormali z e d O n - Resis t a n c e
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Figure 5. Transfer Characteristics
WL-CSP MOSFET
Figure 4.
On-Resi sta nce vs Gate to
Source Voltage
Figure 6.
Sourc e to D rain Diod e
Forward Voltage vs Source Current
3
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