Fairchild FDZ391P service manual

tm

FDZ391P

®

P-Channel 1.5 V PowerTrench

-20 V, -3 A, 85 mΩ
Features

 Max r
 Max r
 Max r
 Occupies only 1.5 mm
 Ultra-thin package: less than 0.4 mm height when mounted

to PCB

 RoHS Compliant

= 85 mΩ at VGS = -4.5 V, ID = -1 A

DS(on)

= 123 mΩ at VGS = -2.5 V, ID = -1 A

DS(on)

= 200 mΩ at VGS = -1.5 V, ID = -1 A

DS(on)

2

of PCB area

Thin

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r

Applications

 Battery management
 Load switch
 Battery protection

November 2008

WL-CSP MOSFET

DS(on)

.

DS(on)

. This

FDZ391P P-Channel 1.5V PowerTrench

®

WL-CSP MOSFET

S

S

D

S

D

BOTTOM

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous TA = 25 °C (Note 1a) -3

-Pulsed -15
Power Dissipation TA = 25 °C (Note 1a) 1.9
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Pin 1

G

S

G

TOP

= 25 °C unless otherwise noted

A

= 25 °C (Note 1b) 0.9

A

D

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 65
Thermal Resistance, Junction to Ambient (Note 1b) 133

Package Marking and Ordering Information

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

6 FDZ391P WL-CSP Thin 7 ’’ 8 mm 5000 units

©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B1

1

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= -250 µA, referenced to 25 °C -12 mV/°C

D

= 0 V -1 µA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

I

D(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.6 -1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

On to State Drain Current VGS = -4.5 V, V

I

= -250 µA, referenced to 25 °C 2 mV/°C

D

= -4.5 V, ID = -1 A 74 85

V

GS

V

= -2.5 V, ID = -1 A 90 123

GS

= -1.5 V, ID = -1 A 140 200

V

GS

= -4.5 V, ID = -1 A TJ = 125 °C 100 123

V

GS

= - 5 V -10 A

DS

Forward Transconductance VDS = -5 V, ID = -1 A 7 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 155 205 pF
Reverse Transfer Capacitance 90 135 pF

= -10 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance f = 1 MHz 9 Ω

800 1065 pF

mΩ

FDZ391P P-Channel 1.5V PowerTrench

®

WL-CSP MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g
gs

gd

Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 50 80 ns
Fall Time 30 48 ns
Total Gate Charge V
Gate to Source Gate Charge 1 nC

Gate to Drain “Miller” Charge 2 nC

VDD = -10 V, ID = -1 A
V

= -4.5 V, R

GS

GS

V

DD

I

D

= -4.5 V

= -10 V

= -1 A

GEN

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 ma terial. R

θJA

the user's board design.

Maximum continuous Drain-Source Diode Forward Current -1.1 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 5 nC

a. 65 °C/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = -1.1 A (Note 2) -0.7 -1.2 V

GS

= -1 A, di/dt = 100 A/µs

I

F

= 6 Ω

11 20 ns

913nC

21 ns

is guaranteed by design while R

θJC

b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDZ391P Rev.B1

2

www.fairchildsemi.com

Typical Characteristics T

= 25 °C unless otherwise noted

J

FDZ391P P-Channel 1.5V PowerTrench

16
14
12
10

8

VGS = -4.5 V

VGS = -3.5 V
VGS = -2.5 V

VGS = -2.0 V

6
4

, DRAIN CURRENT (A)

D

-I

2
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Figure 1.

1.5

1.4

PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX

-VDS, DRAIN TO SOURCE VOLTA GE (V)

On Region Characteristics Figure 2.

ID = -1 A

= -4.5 V

V

GS

VGS = -1.5 V

1.3

1.2

1.1

1.0

NORMALIZED

0.9

0.8

0.7

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE

o

(

C

)

Fi g ure 3 . Norm a lize d On Re s ista n ce

vs Junction Temperature

2.0

PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX

VGS = -2.0 V

V

V

= -2.5 V

GS

= -3.5 V

GS

NORMALIZED

VGS = -1.5 V

1.8

1.6

1.4

1.2

1.0

V

= -4.5 V

DRAIN TO SOURCE ON-RESISTANCE

0.8
0246810121416

-ID, DRAIN CURRENT(A)

GS

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

240

)

Ω

m

(

200

ID = - 0.5 A

160

120

, DRAIN TO

DS(on)

r

80

T

= 25 oC

J

SOURCE ON-RESISTANCE

40

12345

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4.

On-Resista nce vs Gate to

PULSE DURA TION = 300 µs
DUTY CYCLE = 2.0% MAX

T

= 125 oC

J

Source Voltage

®

WL-CSP MOSFET

15

12

, DRAIN CURRENT (A)

D

-I

FDZ391P Rev.B1

PULSE DURATION = 300 µs
DUTY CYCLE = 2.0% MAX

V

= -5 V

DD

9

6

T

= 125 oC

J

3

0

0.5 1.0 1.5 2.0 2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

60

V

= 0 V

GS

10

1

T

= 125 oC

J

0.1

TJ = 25 oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Dr ai n Diode

TJ = -55 oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com