Fairchild FDZ375P service manual
FDZ375P
P-Channel 1.5 V Specified PowerTrench® Thin
-20 V, -3.7 A, 78 mΩ
Features
Max r
Max r
Max r
Max r
Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted to
PCB
RoHS Compliant
= 78 mΩ at VGS = -4.5 V, ID = -2.0 A
DS(on)
= 92 mΩ at VGS = -2.5 V, ID = -1.5 A
DS(on)
= 112 mΩ at VGS = -1.8 V, ID = -1.0 A
DS(on)
= 150 mΩ at VGS = -1.5 V, ID = -1.0 A
DS(on)
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ375P minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
Battery management
Load switch
Battery protection
WL-CSP MOSFET
.
DS(on)
April 2010
. This
DS(on)
FDZ375P P-Channel 1.5 V Specified PowerTrench
®
Thin
D
BOTTOM
Pin 1
S
S
G
Pin 1
G
TOP
S
D
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) -3.7
-Pulsed -12
Power Dissipation TA = 25°C (Note 1a) 1.7
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25°C (Note 1b) 0.5
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 75
Thermal Resistance, Junction to Ambient (Note 1b) 260
Package Marking and Ordering Information
A
W
°C/W
WL-CSP MOSFET
Device Marking Device Package Reel Size Tape Width Quantity
N FDZ375P WL-CSP 1.0X1.0 Thin 7 ” 8 mm 5000 units
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
1
www.fairchildsemi.com
FDZ375P P-Channel 1.5 V Specified PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= -250 µA, referenced to 25 °C -12 mV/°C
D
= 0 V -1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.3 -0.5 -1.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 µA, referenced to 25 °C 2 mV/°C
D
V
= -4.5 V, ID = -2.0 A 65 78
GS
= -2.5 V, ID = -1.5A 77 92
V
GS
= -1.8 V, ID = -1.0 A 92 112
V
GS
= -1.5 V, ID = -1.0 A 112 150
V
GS
= -4.5 V, ID = -2.0 A,
V
GS
T
=125°C
J
98 143
Forward Transconductance VDD = -5 V, ID = -3.3 A 11 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 110 145 pF
Reverse Transfer Capacitance 95 150 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 8.2 15 ns
Turn-Off Delay Time 138 221 ns
Fall Time 84 124 ns
Total Gate Charge
Gate to Source Charge 0.8 nC
Gate to Drain “Miller” Charge 3 nC
= -10 V, VGS = 0 V,
V
DS
f = 1 MHz
= -10 V, ID = -3.3 A,
V
DD
V
= -4.5 V, R
GS
= -4.5 V, VDD = -10 V,
V
GS
I
= -3.3 A
D
GEN
= 6 Ω
650 865 pF
5.3 11 ns
11 15 nC
mΩ
®
Thin
WL-CSP MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
Maximum Continuous Drain-Source Diode Forward Current -1.1 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 43 69 nC
GS
= -3.3 A, di/dt = 100 A/µs
I
F
a. 75 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V
68 109 ns
is guaranteed by desig n while R
θJC
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
2
is determined by
θCA
www.fairchildsemi.com
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