Fairchild FDZ371PZ service manual
FDZ371PZ
P-Channel 1.5 V Specified PowerTrench® Thin
-20 V, -3.7 A, 75 mΩ
Features
Max r
Max r
Max r
Max r
Occupies only 1.0 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted to
PCB
HBM ESD protection level >4.4kV typical (Note 3)
RoHS Compliant
= 75 mΩ at VGS = -4.5 V, ID = -2.0 A
DS(on)
= 90 mΩ at VGS = -2.5 V, ID = -1.5 A
DS(on)
= 110 mΩ at VGS = -1.8 V, ID = -1.0 A
DS(on)
= 150 mΩ at VGS = -1.5 V, ID = -1.0 A
DS(on)
2
of PCB area.Less than 30% of the
Pin 1
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ371PZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
Battery management
Load switch
Battery protection
November 2009
WL-CSP MOSFET
.
DS(on)
DS(on)
. This
FDZ371PZ P-Channel 1.5 V Specified PowerTrench
®
Thin
S
D
BOTTOM
S
G
Pin 1
TOP
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) -3.7
-Pulsed -12
Power Dissipation TA = 25°C (Note 1a) 1.7
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25°C (Note 1b) 0.5
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 75
Thermal Resistance, Junction to Ambient (Note 1b) 260
Package Marking and Ordering Information
A
W
°C/W
WL-CSP MOSFET
Device Marking Device Package Reel Size Tape Width Quantity
K FDZ371PZ WL-CSP 1.0X1.0 Thin 7 ” 8 mm 5000 units
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
1
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= -250 µA, referenced to 25 °C 22 mV/°C
D
= 0 V -1 µA
GS
= 0 V ±10 µA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA-0.35-0.6-1.0V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 µA, referenced to 25 °C -4 mV/°C
D
V
= -4.5 V, ID = -2.0 A 55 75
GS
= -2.5 V, ID = -1.5A 65 90
V
GS
= -1.8 V, ID = -1.0 A 80 110
V
GS
= -1.5 V, ID = -1.0 A 100 150
V
GS
= -4.5 V, ID = -2.0 A,
V
GS
T
=125°C
J
80 124
Forward Transconductance VDD = -5 V, ID = -3.3 A 14 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 110 145 pF
Reverse Transfer Capacitance 100 150 pF
= -10 V, VGS = 0 V,
V
DS
f = 1 MHz
750 1000 pF
mΩ
FDZ371PZ P-Channel 1.5 V Specified PowerTrench
®
Thin
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 9.1 18 ns
Turn-Off Delay Time 124 198 ns
Fall Time 88 140 ns
Total Gate Charge
Gate to Source Charge 1.1 nC
Gate to Drain “Miller” Charge 3.4 nC
= -10 V, ID = -3.3 A,
V
DD
V
= -4.5 V, R
GS
= -4.5 V, VDD = -10 V,
V
GS
I
= -3.3 A
D
GEN
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 ma terial. R
1. R
θJA
the user's board design.
Maximum Continuous Drain-Source Diode Forward Current -1.1 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 29 47 nC
a. 75 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V
GS
= -3.3 A, di/dt = 100 A/µs
I
F
= 6 Ω
5.9 12 ns
12 17 nC
61 98 ns
is guaranteed by design while R
θJC
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
WL-CSP MOSFET
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
2
www.fairchildsemi.com
Typical Characteristics T
= 25 °C unless otherwise noted
J
FDZ371PZ P-Channel 1.5 V Specified PowerTrench
12
VGS = - 4.5 V
VGS = -3.5 V
VGS = - 3.0 V
9
VGS = -2.5 V
6
DRAIN CURRENT (A)
3
,
D
-I
0
0.0 0.5 1.0 1.5 2.0 2.5
Figure 1.
1.6
ID = -2.0 A
V
= -4.5 V
GS
1.4
VGS = - 1.8 V
VGS = -1.5 V
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
-V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
o
(
C
)
Figu r e 3. Nor m a lized O n - Resist a n ce
vs Junction Temperature
2.5
VGS = -1.5 V
2.0
V
= -1.8 V
GS
1.5
NORMALIZED
VGS = -2.5 V
VGS = -3.0 V
VGS = -3.5 V
1.0
PULSE DURATION = 80 µs
DRAIN TO SOURCE ON-RESISTANCE
DUTY CYCLE = 0.5% MAX
0.5
036912
-ID,
DRAIN CURRENT (A)
VGS = -4.5 V
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
400
)
Ω
m
(
300
200
DRAIN TO
,
DS(on)
r
100
TJ = 25 oC
SOURCE ON-RESISTANCE
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Figure 4.
TJ = 125 oC
-V
,
GATE TO S O URCE VOLTAGE (V )
GS
On-Resistanc e v s Gate to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = -2.0 A
Source Voltage
®
Thin
WL-CSP MOSFET
12
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
9
V
= -5 V
DS
6
3
, DRAIN CURRENT (A)
D
-I
0
0.51.01.52.0
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 150 oC
TJ = 25 oC
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDZ371PZ Rev.C
TJ = -55 oC
10
V
= 0 V
GS
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6.
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Dr ain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
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