Fairchild FDZ193P service manual
June 2009
G
P-Channel 1.7V PowerTrench
FDZ193P
P-Channel 1.7V PowerTrench
-20V, -1A, 90m:
Features
Max r
Max r
Max r
Occupies only 1.5 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
= 90m: at VGS = -4.5V, ID = -1A
DS(on)
= 130m: at VGS = -2.5V, ID = -1A
DS(on)
= 300m: at VGS = -1.7V, ID = -1A
DS(on)
2
of PCB area Less than 50% of the
S
S
D
S
D
PIN 1
PIN 1
®
WL-CSP MOSFET
General Description
Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and r
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r
DS(on)
.
. This advanced
DS(on)
Application
Battery management
Load switch
Battery protection
S
G
tm
®
WL-CSP MOSFET
BOTTOM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Note 1a) -3
-Pulsed -15
Power Dissipation (Note 1a) 1.9
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
TOP
D
Thermal Characteristics
R
TJA
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
Thermal Resistance, Junction to Ambient (Note 1b) 133
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
2 FDZ193P WL-CSP 7’’ 8mm 5000 units
A
W
°C/W
©2009 Fairchild Semiconductor Corporation
FDZ193P Rev.C2 (W)
1
www.fairchildsemi.com
P-Channel 1.7V PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
'BV
'T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -20 V
Breakdown Voltage Temperature
Coefficient
I
= -250PA, referenced to 25°C -11 mV/°C
D
Zero Gate Voltage Drain Current VDS = -16V, VGS= 0V -1 PA
Gate to Source Leakage Current VGS = ±12V, VGS= 0V ±100 nA
On Characteristics
V
GS(th)
'V
'T
r
DS(on)
I
D(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -0.6 -0.9 -1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
I
= -250PA, referenced to 25°C 3 mV/°C
D
= -4.5V, ID = -1A 66 90
V
GS
V
= -2.5V, ID = -1A 92 130
GS
= -1.7V, ID = -1A 195 300
V
GS
= -4.5V, ID = -1A TJ = 125°C 84 123
V
GS
On to State Drain Current VGS = -4.5V, VDS= -5V -10 A
Forward Transconductance VDS = -5V, ID = -1A 5.6 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 150 pF
Reverse Transfer Capacitance 90 pF
= -10V, VGS = 0V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz 9.5 :
660 pF
®
WL-CSP MOSFET
m:
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 10 20 ns
Turn-Off Delay Time 28 45 ns
VDD = -10V, ID = -1A
V
= -4.5V, R
GS
GEN
= 6:
13 23 ns
Fall Time 21 34 ns
Total Gate Charge at 10V VGS= 0V to 10V
Gate to Source Gate Charge 1 nC
V
I
D
= -10V
DD
= -1A
710nC
Gate to Drain “Miller” Charge 2 nC
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
TJA
side of the solder ball, R
are guaranteed by design while R
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
Maximum continuous Drain-Source Diode Forward Current -1.1 A
Source to Drain Diode Forward Voltage VGS= 0V, IS= -1.1A (Note 2) -0.7 -1.2 V
Reverse Recovery Time
Reverse Recovery Charge 6 nC
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
is defined for reference. For R
TJB
is determined by the user's board design.
TJA
a. 65°C/W when mounted on
a 1 in
X 1 .5” X 0.0 62” thi ck P CB
the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
TJC
2
pad of 2 oz copper,1.5”
= -1A, di/dt = 100A/Ps
I
F
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
19 ns
TJC
and R
TJB
FDZ193P Rev.C2 (W)
2
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P-Channel 1.7V PowerTrench
:
Typical Characteristics T
16
VGS = -4.5V
14
12
10
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance
1.4
ID = -1A
= -4.5V
V
GS
1.3
1.2
1.1
1.0
NORMALIZED
0.9
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
VGS = -3V
VGS = -3.5V
= 25°C unless otherwise noted
J
VGS = -2.5V
VGS = -2V
VGS = -1.7V
2.0
PULSE DURATION = 300Ps
1.8
1.6
VGS = -2V
DUTY CYCLE = 2.0%MAX
VGS = -2.5V
1.4
1.2
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.8
0246810121416
-ID, DRAIN CURRENT(A)
vs Drain Current and Gate Voltage
, DRAIN TO
r
DS(on)
)
(m
240
200
160
120
ID= -1A
80
TJ= 25oC
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
TJ= 125oC
V
V
V
GS
GS
GS
=-3V
=-3.5V
=-4.5V
®
WL-CSP MOSFET
0.8
DRAIN TO SOURCE ON-RESISTANCE
-50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
16
14
12
10
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
FDZ193P Rev.C2 (W)
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
V
= -5V
DD
TJ= 125oC
TJ = -55oC
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
SOURCE ON-RESISTANCE
40
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS, GATE TO SOURCE VOLTAGE (V)
F i g u re 4 . O n - R e si s t a n c e v s G a t e t o
Source Voltage
10
VGS= 0V
1
TJ= 125oC
0.1
0.01
1E-3
, REVERSE DRAIN CURRENT (A)
S
I
1E-4
0.2 0.4 0.6 0.8 1.0 1.2
TJ = 25oC
TJ = -55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Voltage vs Source Current
3
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