Fairchild FDZ192NZ service manual

FDZ192NZ
N-Channel 1.5 V Specified PowerTrench® Thin
20 V, 5.3 A, 39 m
Features
Max rMax rMax rMax rOccupies only 1.5 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
HBM ESD protection level > 2200V (Note3)RoHS Compliant
= 39 mΩ at VGS = 4.5 V, ID = 2.0 A
DS(on)
= 43 mΩ at VGS = 2.5 V, ID = 2.0 A
DS(on)
= 49 mΩ at VGS = 1.8 V, ID = 1.0 A
DS(on)
= 55 mΩ at VGS = 1.5 V, ID = 1.0 A
DS(on)
2
of PCB area.Less than 50% of the
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ192NZ minimizes both PCB space and r advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r
Applications
Battery management Load switchBattery protection
January 2010
WL-CSP MOSFET
.
DS(on)
DS(on)
FDZ192NZ N-Channel 1.5 V Specified PowerTrench
. This
PIN1
S
S
D
D
BOTTOM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 20 V Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) 5.3
-Pulsed 15 Power Dissipation TA = 25°C (Note 1a) 1.9 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C
G
S
WL-CSP 1x1.5 Thin
TOP
= 25 °C unless otherwise noted
A
= 25°C (Note 1b) 0.9
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 65 Thermal Resistance, Junction to Ambient (Note 1b) 133
Package Marking and Ordering Information
A
W
°C/W
®
Thin
WL-CSP MOSFET
Device Marking Device Package Reel Size Tape Width Quantity
8 FDZ192NZ WL-CSP 1x1.5 Thin 7 ” 8 mm 5000 units
©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1
1
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
BVT
I
DSS
I
GSS
DSS
DSS J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V Breakdown Voltage Temperature
Coefficient Zero Gate Voltage Drain Current VDS = 16 V, V Gate to Source Leakage Current VGS = ±8 V, V
I
= 250 µA, referenced to 25 °C 10 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±10 µA
DS
On Characteristics
V
GS(th)
VT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.4 0.7 1.0 V Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -3 mV/°C
D
V
= 4.5 V, ID = 2.0 A 26 39
GS
= 2.5 V, ID = 2.0 A 29 43
V
GS
= 1.8 V, ID = 1.0 A 33 49
V
GS
= 1.5 V, ID = 1.0 A 38 55
V
GS
= 4.5 V, ID = 2.0 A,
V
GS
T
=125 °C
J
31 47
Forward Transconductance VDS = 5 V, ID = 5.3 A 36 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance 145 195 pF Reverse Transfer Capacitance 100 150 pF
= 10 V, VGS = 0 V,
V
DS
f = 1 MHz
915 1220 pF
m
FDZ192NZ N-Channel 1.5 V Specified PowerTrench
Thin
®
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q Q Q
g gs gd
Turn-On Delay Time Rise Time 410ns Turn-Off Delay Time 50 80 ns Fall Time 20 32 ns Total Gate Charge V Gate to Source Charge 1.3 nC Gate to Drain “Miller” Charge 2.3 nC
= 10 V, ID = 5.3 A,
V
DD
V
= 4.5 V, R
GS
= 0 V to 4.5 V
GS
GEN
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 4.6 10 nC
a. 65 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V, IS = 1.1 A (Note 2) 0.6 1.2 V
GS
= 5.3 A, di/dt = 100 A/µs
I
F
= 6
V
DD
I
= 5.3 A
D
= 10 V,
6.5 13 ns
12 17 nC
18 32 ns
is guaranteed by desig n while R
θJC
b. 133 °C/W when mounted on a minimum pad of 2 oz copper.
is determined by
θCA
WL-CSP MOSFET
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1
2
www.fairchildsemi.com
Typical Characteristics T
= 25 °C unless otherwise noted
J
FDZ192NZ N-Channel 1.5 V Specified PowerTrench
15
VGS = 4.5 V
VGS = 3 V
12
VGS = 2.5 V
9
6
3
, DRAIN CURRENT (A)
D
I
0
0.00.20.40.60.81.0
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
1.6
1.4
On-Region Characteristics Figure 2.
ID = 2 A
= 4.5 V
V
GS
VGS = 1.8 V
VGS = 1.5 V
PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
o
C)
Figu r e 3. Nor m a lized O n - Resist a n ce
vs Junction Temperature
2.5
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
2.0
VGS =1.5 V
VGS = 1.8 V
NORMALIZED
1.5
1.0
V
= 2.5 V
GS
DRAIN TO SOURCE ON-RESISTANCE
0.5 03691215
I
, DRAIN CURRENT (A)
D
VGS = 3 V
V
GS
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
100
)
m
80
(
60
DRAIN TO
,
40
DS(on)
r
20
SOURCE ON-RESISTANCE
0
0.51.01.52.02.53.03.54.04.5
V
,
GATE TO S O URCE VOLTAGE (V )
GS
Figure 4.
On-Resistanc e v s Gate to
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
ID = 2 A
TJ = 125 oC
TJ = 25 oC
Source Voltage
= 4.5 V
®
Thin
WL-CSP MOSFET
15
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
12
V
= 5 V
DS
9
6
, DRAIN CURRENT (A)
3
D
I
0
0.60.81.01.21.41.6
TJ = 150 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1
20 10
V
= 0 V
GS
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
, REVERSE DRAIN CURRENT (A)
S
TJ = -55 oC
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Dr ain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
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