Fairchild FDZ191P service manual

June 2009

FDZ191P P-Channel 1.5V PowerTrench

FDZ191P

®

P-Channel 1.5V PowerTrench

-20V, -1A, 85m:

Features

 Max r

 Max r

 Max r

 Occupies only 1.5 mm

area of 2 x 2 BGA

 Ultra-thin package: less than 0.65 mm height when mounted

to PCB

 RoHS Compliant

= 85m: at VGS = -4.5V, ID = -1A

DS(on)

= 123m: at VGS = -2.5V, ID = -1A

DS(on)

= 200m: at VGS = -1.5V, ID = -1A

DS(on)

D

2

of PCB area Less than 50% of the

S

S

D

G

S

PIN 1

PIN 1

WL-CSP MOSFET

General Description

Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and r
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r

Application

 Battery management

 Load switch

 Battery protection

DS(on)



. This advanced

DS(on)

.

®

WL-CSP MOSFET

S

G

BOTTOM

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage -20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) -3

-Pulsed -15

Power Dissipation (Note 1a) 1.9

Power Dissipation (Note 1b) 0.9

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

A

TOP

D

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 65

Thermal Resistance, Junction to Ambient (Note 1b) 133

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

1 FDZ191P WL-CSP 7’’ 8mm 5000 units

A

W

°C/W

©2009 Fairchild Semiconductor Corporation
FDZ191P Rev.F3 (W)

1

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FDZ191P P-Channel 1.5V PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

I

D(on)

g

FS

Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -20 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = -16V, V

Gate to Source Leakage Current VGS = ±8V, V

I

= -250PA, referenced to 25°C -12 mV/°C

D

= 0V -1 PA

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -0.4 -0.6 -1.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

On to State Drain Current VGS = -4.5V, V

Forward Transconductance VDS = -5V, ID = -1A 7 S

I

= -250PA, referenced to 25°C 2 mV/°C

D

= -4.5V, ID = -1A 67 85

V

GS

V

= -2.5V, ID = -1A 85 123

GS

= -1.5V, ID = -1A 140 200

V

GS

= -4.5V, ID = -1A TJ = 125°C 87 123

V

GS

= -5V -10 A

DS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 155 pF

Reverse Transfer Capacitance 90 pF

= -10V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 9 :

800 pF

m:

®

WL-CSP MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g(TOT)

gs

gd

Turn-On Delay Time

Rise Time 10 20 ns

Turn-Off Delay Time 50 80 ns

VDD = -10V, ID = -1A
V

= -4.5V, R

GS

GEN

= 6:

11 20 ns

Fall Time 30 48 ns

Total Gate Charge at 10V V

Gate to Source Gate Charge 1 nC

= 0V to 10V

GS

V
I

D

= -10V

DD

= -1A

913nC

Gate to Drain “Miller” Charge 2 nC

Drain-Source Diode Characteristics

I

S

V

SD

t

rr

Q

rr

Notes:

1: R

TJA

side of the solder ball, R
are guaranteed by design while R

2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

Maximum continuous Drain-Source Diode Forward Current -1.1 A

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 5 nC

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board

is defined for reference. For R

TJB

is determined by the user's board design.

TJA

a. 65°C/W when mounted on
a 1 in
X 1 .5” X 0.0 62” thi ck P CB

the thermal reference point for the case is defined as the top surface of the copper chip carrier. R

TJC

2

pad of 2 oz copper,1.5”

= 0V, IS = -1.1A (Note 2) -0.7 -1.2 V

GS

= -1A, di/dt = 100A/Ps

I

F

21 ns

b. 133°C/W when mounted on a
minimum pad of 2 oz copper

TJC

and R

TJB

FDZ191P Rev.F3(W)

2

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FDZ191P P-Channel 1.5V PowerTrench

Typical Characteristics T

16

14

12

10

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.5

ID = -1A

1.4

V

GS

= -4.5V

1.3

1.2

1.1

1.0

NORMALIZED

0.9

0.8

0.7

DRAIN TO SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

VGS = -4.5V

VGS = -3.5V

VGS = -2.5V

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

On Region Characteristics Figure 2.

= 25°C unless otherwise noted

J

VGS = -2.0V

VGS = -1.5V

2.0

PULSE DURATION = 300Ps

VGS = -1.5V

1.8

1.6

1.4

1.2

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.8
0246810121416

-ID, DRAIN CURRENT(A)

DUTY CYCLE = 2.0%MAX

VGS = -2.0V

V

= -2.5V

GS

V

= -3.5V

GS

V

= -4.5V

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

240

ID = - 0.5A

200

(m:)

160

120

, DRAIN TO

DS(on)

r

80

SOURCE ON-RESISTANCE

40

12345

Figure 4.

o

T

= 25

C

J

-VGS, GATE TO SOURCE VOLTAGE (V)

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

TJ = 125oC

Source Voltage

®

WL-CSP MOSFET

15

12

9

6

, DRAIN CURRENT (A)

3

D

-I

0

0.51.01.52.02.5

Figure 5. Transfer Characteristics

FDZ191P Rev.F3 (W)

PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX

V

= -5V

DD

TJ = 125oC

TJ = 25oC

TJ = -55oC

-VGS, GATE TO SOURCE VOLTAGE (V)

60

V

= 0V

GS

10

1

TJ = 125oC

0.1

TJ = 25oC

0.01

1E-3

, REVERSE DRAIN CURRENT (A)

S

I

1E-4

0.00.20.40.60.81.01.21.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

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