Fairchild FDY301NZ service manual
January 2006
FDY301NZ
Single N-Channel 2.5V Specified PowerTrench
MOSFET
FDY301NZ Single N-Channel 2.5V Specified PowerTrench
General Description
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ VGS = 2.5v.
DS(ON)
Applications
• Li-Ion Battery Pack
Features
• 200 mA, 20 V R
R
• ESD protection diode (note 3)
• RoHS Compliant
= 5 Ω @ VGS = 4.5 V
DS(ON)
= 7 Ω @ VGS = 2.5 V
DS(ON)
1 S
G
1
G
3
D
2
S
D
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 1000
PD Power Dissipation (Steady State)
TJ, T
Operating and Storage Junction Temperature
STG
Range
TA=25oC unless otherwise noted
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
± 12
200 mA
625 mW
446
–55 to +150
V
°C
MOSFET
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
D FDY301NZ 7’’ 8 mm 3000units
2006 Fairchild Semiconductor Corporation
FDY301NZ Rev A
(Note 1a) 1a)
(Note 1b) 1
200
280
www.fairchildsemi.com
°C/W
FDY301NZ Single N-Channel 2.5V Specified PowerTrench
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown
DSS
∆BV
DSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage,
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Voltage
Breakdown Voltage Temperature
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
= 250 µA, Referenced to 25°C
I
D
VGS = ± 12 V, VDS = 0 V
V
= ± 4.5 V, VDS = 0 V
GS
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25 C
I
D
VGS = 4.5 V, ID = 200 mA
= 2.5 V, ID = 175 mA
V
GS
V
= 1.8 V, ID = 150 mA
GS
= 1.5 V ID = 20 mA
V
GS
V
= 4.5 V, ID=200mA, TJ = 125°C
GS
gFS Forward Transconductance VDS = 5 V, ID = 200 mA 1.1
20 V
14
mV/°C
± 10
± 1
0.6 - 1.5
2.8
mV/°C
5
7
9
10
7
S
Dynamic Characteristics
C
Input Capacitance 60 pF
iss
C
Output Capacitance 20 pF
oss
C
Reverse Transfer Capacitance
rss
Switching Characteristics
t
Turn–On Delay Time 6 12 ns
d(on)
(Note 2)
tr Turn–On Rise Time 8 16 ns
t
Turn–Off Delay Time 8 16 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 0.8 1.1
Qgs Gate–Source Charge 0.16 nC
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
trr Diode Reverse Recovery Time 12 nS
Qrr Diode Reverse Recovery Charge
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1. R
θJA
the drain pins. R
Voltage
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
= 10 V, V
V
DS
= 0 V,
GS
f = 1.0 MHz
= 10 V, ID = 1 A,
V
DD
V
= 4.5 V, R
GS
= 10 V, ID = 200 mA,
V
DS
V
= 4.5 V
GS
GEN
= 6 Ω
VGS = 0 V, IS = 150 mA
IF = 200 mA,
/dt = 100 A/µs
dI
F
10 pF
2.4
0.26
(Note 2)
0.7 1.2
3 nC
4.8
nC
µA
µA
µA
V
Ω
ns
nC
V
MOSFET
a) 200°C/W when
mounted on a 1in
of 2 oz copper
FDY301NZ Rev A www.fairchildsemi.com
2
pad
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
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