Fairchild FDY300NZ service manual
January 2007
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDY300NZ Rev B
FDY300NZ
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
DS(ON)
@ VGS= 2.5v.
Applications
• Li-Ion Battery Pack
Features
• 600 mA, 20 V R
DS(ON)
= 700 mΩ @ VGS= 4.5 V
R
DS(ON)
= 850 mΩ @ VGS= 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Unit
s
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1a) 1a) 600 mA
– Pulsed 1000
P
D
Power Dissipation (Steady State) (Note 1a) 1a) 625 mW
(Note 1b) 1
446
TJ, T
STG
Operating and Storage Junction Temperature
Range
–55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 1
280
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
C FDY300NZ 7 ’’ 8 mm 3000 units
FDY300NZ Single N-Channel 2.5V Specified PowerTrench
MOSFET
1
2
3
G
D
S
1S
G
D
tm
January 2007
FDY300NZ Rev
B www.fairchildsemi.com
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
V
GS
= 0 V, ID= 250 µA
20 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
15
mV/°C
I
DSS
Zero Gate Voltage Drain Current VDS= 16 V, VGS= 0 V 1
µA
VGS= ± 12 V, VDS= 0 V ± 10 µA
I
GSS
Gate–Body Leakage,
VGS= ± 4.5 V, VDS= 0 V ± 1 µA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID= 250 µA
0.6 1.0 1.3 V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
VGS= 4.5 V, ID= 600 mA
V
GS
= 2.5 V, ID= 500 mA
V
GS
= 1.8 V, ID= 150 mA
V
GS
= 4.5 V, ID=600mA, TJ= 125°C
0.24
0.36
0.70
0.35
0.70
0.85
1.25
1.00
Ω
g
FS
Forward Transconductance VDS= 5 V, ID= 600 mA 1.8 S
Dynamic Characteristics
C
iss
Input Capacitance 60 pF
C
oss
Output Capacitance 20 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, VGS= 0 V,
f = 1.0 MHz
10 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 6 12 ns
t
r
Turn–On Rise Time 8 16 ns
t
d(off)
Turn–Off Delay Time 8 16 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, ID= 1 A,
V
GS
= 4.5 V, R
GEN
= 6 Ω
2.4 4.8 ns
Q
g
Total Gate Charge 0.8 1.1 nC
Q
gs
Gate–Source Charge 0.16 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, ID= 600 mA,
V
GS
= 4.5 V
0.26
nC
Drain–Source Diode Characteristics and Maximum Ratings
V
SD
Drain–Source Diode Forward
Voltage
VGS= 0 V, IS= 150 mA
(Note 2)
0.7 1.2 V
t
rr
Diode Reverse Recovery Time 8 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 600 mA,
dI
F
/dt = 100 A/µs
1 nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 200°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY300NZ Single N-Channel 2.5V Specified PowerTrench
MOSFET
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