Fairchild FDY3000NZ service manual
January 2007
2007 Fairchild Sem iconductor Corporation
www.fairchildsemi.com
FDY3000NZ Rev B
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench M OSFET
General Description
This Dual N-Channel MOSFET has been designed
using Fairchild Sem iconductor’s advanced Power
Trench process to optim ize the R
DS(ON)
@ VGS = 2.5v.
Applications
x Li-Ion Battery Pack
Features
x 600 mA, 20 V R
DS(ON)
= 700 m:
@ V
GS
= 4.5 V
R
DS(ON)
= 850 m: @ V
GS
= 2.5 V
x ESD protection diode (note 3)
x RoHS Com pliant
Absolute Maximum Ratings T
A
=25oC unless other wise noted
Symbol Param eter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
r 12
V
ID Drain Current – Continuous (Note 1a) 600 mA
– Pulsed 1000
PD Power Dissipation (Steady State) (Note 1a) 625 mW
(Note 1b)
446
TJ, T
STG
Operating and Storage Junction Temperature
Range
–55 to +150
qC
Therm al Characteristics
R
TJA
Therm al Resistance, Junction-to-Ambient
(Note 1a) 200
qC/W
R
TJA
Therm al Resistance, Junction-to-Ambient
(Note 1b) 280
Package M arking and Ordering Inform ation
Device Marking Device Reel Size Tape width Quantity
C FDY3000NZ 7 ’’ 8 mm 3000 units
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench
M OSFET
1
3
5
2
4
6
S
1
D
1
G
2
S
2
D
2
G
1
4
6
5
3
1
2
tm
January 2007
FDY3000NZ Rev B www.fairchi ldsemi.com
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
VGS = 0 V, I
D
= 250 PA
20 V
'BVDSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 PA, Referenced to 25qC
14
mV/qC
I
DSS
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
PA
V
GS
= r 12 V, VDS = 0 V r 10 PA
I
GSS
Gate–Body Leakage,
V
GS
= r 4.5 V, VDS = 0 V r 1 PA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, I
D
= 250 PA
0.6 1.0 1.3 V
'V
GS(th)
'T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 PA, Referenced to 25qC
– 3
mV/qC
R
DS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 150 mA
VGS = 4.5 V, ID=600mA, T
J
= 125qC
0.25
0.37
0.73
0.35
0.70
0.85
1.25
1.00
:
gFS Forward Transconductance VDS = 5 V, ID = 600 mA 1.8 S
Dynamic Characteristics
C
iss
Input Capacitance 60 pF
C
oss
Output Capacitance 20 pF
C
rss
Reverse Transfer Capacitance
VDS = 10 V, V
GS
= 0 V,
f = 1.0 MHz
10 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 8 16 ns
t
d(off)
Turn–Off Delay Time 8 16 ns
tf Turn–Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 :
2.4 4.8 ns
Qg Total Gate Charge 0.8 1.1 nC
Qgs Gate–Source Charge 0.16 nC
Qgd Gate–Drain Charge
V
DS
= 10 V, ID = 600 mA,
VGS = 4.5 V
0.26 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V
trr Diode Reverse Recovery Time 8 nS
Qrr Diode Reverse Recovery Charge
IF = 600 mA,
dIF/dt = 100 A/µs
1 nC
Notes:
1. R
TJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
TJC
is guaranteed by design while R
TCA
is determined by the user's board design
a) 200°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench
MOSFET
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