Fairchild FDY102PZ service manual

t

FDY102PZ

Single P-Channel (–1.5 V) Specified PowerTrench®MOSFET

–20 V, –0.83 A, 0.5 :
Features

 Max r

 Max r

 Max r

 Max r

 HBM ESD protection level = 1400 V (Note 3)

 RoHS Compliant

= 0.5 : at VGS = –4.5 V, ID = –0.83 A

DS(on)

= 0.7 : at VGS = –2.5 V, ID = –0.70 A

DS(on)

= 1.2 : at VGS = –1.8 V, ID = –0.43 A

DS(on)

= 1.8 : at VGS = –1.5 V, ID = –0.36 A

DS(on)

General Description

This Single P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r

DS(on)@VGS

= –1.5 V.

Application

 Li-Ion Battery Pack

FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench

February 2010

m

1

S

G

D

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) –0.83

-Pulsed –1.0

Power Dissipation (Note 1a) 0.625

Power Dissipation (Note 1b) 0.446

Operating and Storage Junction Temperature Range –55 to +150 °C

SC89-3

= 25 °C unless otherwise noted

A

G

D

3

S

2

Thermal Characteristics

R

TJA

R

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 200

Thermal Resistance, Junction to Ambient (Note 1b) 280

Package Marking and Ordering Information

®

MOSFET

A

W

°C/W

Device Marking Device Package Reel Size Tape Width Quantity

E FDY102PZ SC89-3 7 ” 8 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2

1

www.fairchildsemi.com

FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = –250 PA, VGS = 0 V –20 V

Breakdown Voltage Temperature
Coefficient

I

= –250 PA, referenced to 25 °C -11 mV/°C

D

Zero Gate Voltage Drain Current VDS = –16 V, VGS= 0 V –1 PA

Gate to Source Leakage Current VGS = ±8 V, V

= 0 V ±10 PA

DS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = –250 PA –0.4 –0.7 –1.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On-Resistance

I

= –250 PA, referenced to 25 °C 3 mV/°C

D

V

= –4.5 V, ID = –0.83 A 0.28 0.5

GS

= –2.5 V, ID = –0.70 A 0.36 0.7

V

GS

= –1.8 V, ID = –0.43 A 0.47 1.2

V

GS

= –1.5 V, ID = –0.36 A 0.62 1.8

V

GS

= –4.5 V, ID = –0.83 A,

V

GS

T

=125 °C

J

0.39 0.85

Forward Transconductance VDD = –5 V, ID = –0.83 A 2 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance 23 35 pF

Reverse Transfer Capacitance 18 30 pF

= –10 V, VGS = 0 V,

V

DS

f = 1 MHz

100 135 pF

:

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Dela y Time

Rise Time 2.9 10 ns

Turn-Off Delay Time 23 37 ns

Fall Time 13 23 ns

Total Gate Charge

Gate to Source Charge 0.3 nC

Gate to Drain “Miller” Charge 0.6 nC

(Note 2)

= –10 V, ID = –0.83 A

V

DD

V

= –4.5 V, R

GS

= –10 V, ID = –0.83 A

V

DD

V

= –4.5 V

GS

GEN

Drain-Source Diode Characteristics and Maximum Rating

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

user's board design.

Maximum Continuous Drain-Source Diode Forward Current –0.52 A

Source to Drain Diode Forward Voltage VGS= 0 V, IS= –0.52 A (Note 2) –1.0 –1.2 V

Reverse Recovery Time

Reverse Recovery Charge 3.8 10 nC

a) 200 oC/W when mounted on

2

pad of 2 oz copper.

a 1 in

= –0.83 A, dIF/dt = 100 A/Ps

I

F

= 6 :

3.5 10 ns

18 31 ns

is guaranteed by design while R

TJC

o

b) 280

C/W when mounted on a

minimum pad of 2 oz copper.

2.2 3.1 nC

is determined by the

TJA

®

MOSFET

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2

2

www.fairchildsemi.com

FDY102PZ Single P-Channel (–1.5 V) Specified PowerTrench

Typical Characteristics T

1.0

0.8

0.6

0.4

, DRAIN CURRENT (A)

D

-I

0.2

0.0

0.00.51.01.52.0

-V

Figure 1.

1.6

ID = -0.83 A
V

= -4.5 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

VGS = -4.5 V

VGS = -2.5 V

VGS = -2.0 V

VGS = -1.8 V

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25 °C unless otherwise noted

J

VGS = -1.5 V

o

C)

4.5

4.0

3.5

VGS = -1.5 V

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5%MAX

VGS = -1.8 V

3.0

VGS= -2.0V

VGS = -2.5 V

NORMALIZED

2.5

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5

0.00.51.01.52.02.5

-I

, DRAIN CURRENT (A)

D

V

GS

=-4.5 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

2.0

(:)

1.6

1.2

DRAIN TO

,

0.8

DS(on)

r

0.4

SOURCE ON-RESISTANCE

0.0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

ID= -0.415 A

TJ= 125 oC

TJ= 25 oC

Source Voltage

®

MOSFET

1.0

PULSE DURATION = 80 P s
DUTY CYCLE = 0.5% MAX

0.8

V

= -5 V

DS

0.6

0.4

TJ = 125 oC

, DRAIN CURRENT (A)

D

-I

0.2

0.0

0.51.01.52.0

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2

TJ = 25 oC

TJ = -55 oC

1

V

= 0 V

GS

0.1

TJ= 125 oC

TJ = 25 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

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