Fairchild FDY101PZ service manual
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
January 2006
FDY101PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ VGS = – 2.5v.
DS(ON)
Applications
• Li-Ion Battery Pack
Features
• – 150 mA, – 20 V R
R
• ESD protection diode (note 3)
• RoHS Compliant
= 8 Ω @ VGS = – 4.5 V
DS(ON)
= 12 Ω @ VGS = – 2.5 V
DS(ON)
1 S
G
G
1
3
2
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage – 20 V
DSS
V
Gate-Source Voltage
GSS
Drain Current – Continuous (Note 1a) – 150 mA ID
– Pulsed – 1000
Power Dissipation (Steady State) (Note 1a) 625 mW PD
TJ, T
Operating and Storage Junction Temperature
STG
Range
(Note 1b)
± 8
446
–55 to +150
D
V
°C
®
MOSFET
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a) 200
(Note 1b) 280
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
B FDY101PZ 7’’ 8 mm 3000 units
©2006 Fairchild Semiconductor Corporation
FDY101PZ R ev A
°C/W
www.fairchildsemi.com
FDY101PZ Single P-Channel (– 2.5V) Specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown
DSS
∆BVDSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = – 16 V, VGS = 0 V – 3
DSS
I
Gate–Body Leakage,
GSS
Voltage
Breakdown Voltage Temperature
Coefficient
V
= 0 V, ID = – 250 µA
GS
= – 250 µA, Referenced to 25°C
I
D
V
= ± 8 V, VDS = 0 V
GS
– 20 V
15
mV/°C
µA
± 10 µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
= VGS, ID = – 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = – 4.5 V, ID = – 150 mA
V
= – 2.5 V, ID = – 125 mA
GS
V
= – 1.8 V, ID = – 100 mA
GS
V
= – 1.5 V，ID = – 30 mA
GS
= – 4.5 V, ID= – 150mA,
V
GS
= 125°C
T
J
– 0.65 – 1.0 – 1.5 V
–3
mV/°C
8
12
15
20
12
Ω
gFS Forward Transconductance VDS = – 5 V, ID = – 150 mA 0.7 S
Dynamic Characteristics
C
Input Capacitance 100 pF
iss
C
Output Capacitance 30 pF
oss
C
Reverse Transfer Capacitance
rss
= – 10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
15 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 13 23 ns
t
Turn–Off Delay Time 8 16 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 1.0 1.4 nC
Qgs Gate–Source Charge 0.2 nC
Qgd Gate–Drain Charge
= – 10 V, ID = – 0.5 A,
V
DD
V
= – 4.5 V, R
GS
= – 10 V, ID = – 150 mA,
V
DS
V
= – 4.5 V
GS
GEN
= 6 Ω
1 2 ns
0.3 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 11 ns
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = – 150 mA(Note 2) – 0.8 – 1.2 V
= – 150 mA,
I
F
dI
/dt = 100 A/µs
F
is determined by the user's board design.
2 nC
®
MOSFET
a) 200°C/W when
mounted on a 1in
of 2 oz copper
FDY101PZ Rev A www.fairchildsemi.com
2
pad
b) 280°C/W when mount ed on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
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