Fairchild FDY100PZ service manual
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1b)
(Note 1a) 1a)
(Note 1b) 1b)
1
2
3
GD
S
January 2006
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench
MOSFET
FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
@ VGS = – 2.5v.
DS(ON)
Applications
• Li-Ion Battery Pack
Features
• – 350 mA, – 20 V R
R
• ESD protection diode (note 3)
• RoHS Compliant
= 1.2 Ω @ VGS = – 4.5 V
DS(ON)
= 1.6 Ω @ VGS = – 2.5 V
DS(ON)
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage – 20 V
DSS
V
Gate-Source Voltage
GSS
Drain Current – Continuous
– Pulsed – 1000
Power Dissipation (Steady State)
TJ, T
Operating and Storage Junction Temperature
STG
Range
Parameter Ratings Unit
TA=25oC unless otherwise noted
± 8
– 350 ID
625 PD
446
–55 to +150
s
V
mA
mW
°C
MOSFET
Thermal Characteristics
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2006 Fairchild Semiconductor Corporation
FDY100PZ Rev A
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
A FDY100PZ 7’’ 8mm 3000 units
200
280
°C/W
www.fairchildsemi.com
FDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown
DSS
∆BV
DSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = – 16 V, VGS = 0 V – 3
DSS
I
Gate–Body Leakage,
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Voltage
Breakdown Voltage Temperature
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = – 250 µA
ID = – 250 µA, Referenced to 25°C
VGS = ± 8 V, VDS = 0 V
VDS = VGS, ID = – 250 µA
ID = 250 µA, Referenced to 25°C
VGS = – 4.5 V, ID = – 350 mA
VGS = – 2.5 V, ID = – 300 mA
VGS = – 1.8 V, ID = – 150 mA
VGS = – 4.5 V, ID = – 350 mA,
– 20
V
15
± 10 µA
mV/°C
– 0.65 –1.0 – 1.5 V
–3
0.5
0.8
1.3
0.7
mV/°C
1.2
1.6
2.7
1.6
TJ =125°C
gFS Forward Transconductance VDS = – 5 V, ID = – 350 mA 1 S
Dynamic Characteristics
C
Input Capacitance 100
iss
C
Output Capacitance 30 pF
oss
C
Reverse Transfer Capacitance
rss
Switching Characteristics
t
Turn–On Delay Time 6 12 ns
d(on)
(Note 2)
tr Turn–On Rise Time 13 23 ns
t
Turn–Off Delay Time 8 16 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 1.0 1.4 nC
Qgs Gate–Source Charge 0.2
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
VDS = – 10 V, V
f = 1.0 MHz
VDD = – 10 V, ID = – 0.5 A,
VGS = – 4.5 V, R
VDS = – 10 V, ID = – 350 mA,
VGS = – 4.5 V
VGS = 0 V, IS = – 150 m A
= 0 V,
GS
= 6 Ω
GEN
15 pF
1 2 ns
0.3
(Note 2)
–0.8 – 1.2 V
Voltage
trr Diode Reverse Recovery Time 11 ns
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
θCA
IF = – 350 mA,
dIF/dt = 100 A/µs
is determined by the user's board design.
2 nC
pF
nC
nC
µA
Ω
MOSFET
a) 200°C/W when
mounted on a 1in2 pad
of 2 oz copper
FDY100PZ Rev A www.fairchildsemi.com
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
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