Fairchild FDY1002PZ service manual

FDY1002PZ

Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET

–20 V, –0.83 A, 0.5 Ω
Features

 Max r
 Max r
 Max r
 Max r
 HBM ESD protection level = 1400 V (Note 3)
 RoHS Compliant

= 0.5 Ω at VGS = –4.5 V, ID = –0.83 A

DS(on)

= 0.7 Ω at VGS = –2.5 V, ID = –0.70 A

DS(on)

= 1.2 Ω at VGS = –1.8 V, ID = –0.43 A

DS(on)

= 1.8 Ω at VGS = –1.5 V, ID = –0.36 A

DS(on)

General Description

This Dual P-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the

r

DS(on)@VGS

= –1.5 V.

Application

 Li-Ion Battery Pack

FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench

October 2008

6

5

4

S

1

1

G

2

1

D

6

1

G

5

2

1

S

3

2

3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage –20 V
Gate to Source Voltage ±8 V
Drain Current -Continuous (Note 1a) –0.83

-Pulsed –1.0
Power Dissipation (Note 1a) 0.625
Power Dissipation (Note 1b) 0.446
Operating and Storage Junction Temperature Range –55 to +150 °C

SC89-6

= 25 °C unless otherwise noted

A

D

2

4

2

Thermal Characteristics

R

θJA

R

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 200
Thermal Resistance, Junction to Ambient (Note 1b) 280

Package Marking and Ordering Information

A

W

°C/W

®

MOSFET

Device Marking Device Package Reel Size Tape Width Quantity

G FDY1002PZ SC89-6 7 ” 8 mm 3000 units

©2008 Fairchild Semiconductor Corporation
FDY1002PZ Rev.B1

1

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FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = –250 µA, VGS = 0 V –20 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = –16 V, V
Gate to Source Leakage Current VGS = ±8 V, V

I

= –250 µA, referenced to 25 °C -11 mV/°C

D

= 0 V –1 µA

GS

= 0 V ±10 µA

DS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = –250 µA –0.4 –0.7 –1.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On-Resistance

I

= –250 µA, referenced to 25 °C 3 mV/°C

D

V

= –4.5 V, ID = –0.83 A 0.28 0.5

GS

= –2.5 V, ID = –0.70 A 0.36 0.7

V

GS

= –1.8 V, ID = –0.43 A 0.47 1.2

V

GS

= –1.5 V, ID = –0.36 A 0.62 1.8

V

GS

= –4.5 V, ID = –0.83 A,

V

GS

T

=125 °C

J

0.39 0.85

Forward Transconductance VDD = –5 V, ID = –0.83 A 2 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 23 35 pF
Reverse Transfer Capacitance 18 30 pF

= –10 V, VGS = 0 V,

V

DS

f = 1 MHz

100 135 pF

Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g
gs

gd

Turn-On Delay Time
Rise Time 2.9 10 ns
Turn-Off Delay Time 23 37 ns
Fall Time 13 23 ns
Total Gate Charge
Gate to Source Charge 0.3 nC

Gate to Drain “Miller” Charge 0.6 nC

(Note 2)

= –10 V, ID = –0.83 A

V

DD

V

= –4.5 V, R

GS

V

= –10 V, ID = –0.83 A

DD

V

= –4.5 V

GS

Drain-Source Diode Characteristics and Maximum Rating

I

S

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

user's board design.

Maximum Continuous Drain-Source Diode Forward Current –0.52 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 3.8 10 nC

a) 200 oC/W when mounted on

2

a 1 in

pad of 2 oz copper.

= 0 V, IS = –0.52 A (Note 2) –1.0 –1.2 V

GS

= –0.83 A, dIF/dt = 100 A/µs

I

F

GEN

= 6 Ω

3.5 10 ns

18 31 ns

is guaranteed by design while R

θJC

o

C/W when mounted on a

b) 280
minimum

pad of 2 oz copper.

2.2 3.1 nC

is determined by the

θJA

®

MOSFET

2. Pulse Test : Pulse Width < 30 0 us, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

FDY1002PZ Rev.B1

2

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FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench

Typical Characteristics T

1.0

0.8

0.6

0.4

, DRAIN CURRENT (A)

D

-I

0.2

0.0

0.00.51.01.52.0

-V

Figure 1.

1.6

ID = -0.83 A
V

= -4.5 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

Fi g ure 3 . Norm aliz e d On R esist ance

vs Junction Temperature

VGS = -4.5 V
VGS = -2.5 V

VGS = -2.0 V

VGS = -1.8 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

T

, JUNCTION TEMPERATURE (

J

= 25 °C unless otherwise noted

J

VGS = -1.5 V

o

C)

4.5

4.0

3.5

VGS = -1.5 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX

VGS = -1.8 V

3.0

V

= -2.0V

GS

VGS = -2.5 V

NORMALIZED

2.5

2.0

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5

0.00.51.01.52.02.5

-I

, DRAIN CURRENT (A)

D

V

= -4.5 V

GS

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

2.0

(Ω)

1.6

1.2

DRAIN TO

,

0.8

DS(on)

r

0.4

SOURCE ON-RESISTANCE

0.0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-V

, GATE TO S OURCE VOLTAGE (V )

GS

Figure 4.

On-Resistance vs Gate to

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

ID = -0.415 A

TJ = 125 oC

TJ = 25 oC

Source Voltage

®

MOSFET

1.0

0.8

0.6

0.4

, DRAIN CURRENT (A)

D

-I

0.2

0.0

0.51.01.52.0

Figure 5. Transfer Characteristics

FDY1002PZ Rev.B1

PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX

V

= -5 V

DS

TJ = 125 oC

-VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55 oC

TJ = 25 oC

1

V

= 0 V

GS

0.1

TJ = 125 oC

TJ = 25 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

-I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Diode

TJ = -55 oC

Forward Voltage vs Source Current

3

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