Fairchild FDW2509NZ, FDW2509NZ Schematic [ru]
January 2005
FDW2509NZ
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
Pin 1
Features
• 7.1 A, 20 V. R
R
• Extended V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
= 20 mΩ @ VGS = 4.5 V
DS(ON)
= 26 mΩ @ VGS = 2.5 V
DS(ON)
range (±12V) for battery applications
GSS
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
±12
Drain Current – Continuous (Note 1a) 7.1 A
– Pulsed 30
Power Dissipation for Single Operation (Note 1a) 1.6 W
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
1.1
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 77
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2509NZ FDW2509NZ 13’’ 12mm 3000 units
2005 Fairchild Semiconductor Corporation
FDW2509NZ Rev C(W)
Electrical Characteristics T
D(on)
FDW2509NZ
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
20 V
11
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage
V
= ±12 V, VDS = 0 V ± 10 µA
GS
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
(Note 4) On–State Drain Current V
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 4.5 V, ID = 7.1 A
V
= 2.5 V, ID = 6.2 A
GS
= 4.5 V, ID = 7.1A, TJ=125°C
V
GS
= 4.5 V, VDS = 5 V 30 A
GS
0.6 0.8 1.5 V
Forward Transconductance VDS = 5 V, ID = 7.1 A 36 S
–3
15
18
20
20
26
29
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 1263 pF
Output Capacitance 327 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V,
179 pF
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 15 27 ns
= 10 V, ID = 1 A,
V
DD
= 4.5 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 27 43 ns
Turn–Off Fall Time
Total Gate Charge 13 19 nC
Gate–Source Charge 2 nC
= 10 V, ID = 7.1 A,
V
DS
V
= 4.5 V
GS
Gate–Drain Charge
12 22 ns
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) R
θJA
b) R
θJA
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. I
parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics).
D(on)
Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward
VGS = 0 V, IS = 1.3 A (Note 2) 1.2 V
Voltage
Diode Reverse Recovery Time IF = 7.1 A, diF/dt = 100 A/µs 20 nS
Diode Reverse Recovery Charge 14 nC
is guaranteed by design while R
θJC
is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
is determined by the user's board design.
θCA
µA
Ω
FDW2509NZ Rev. C(W)
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