Fairchild FDW2509NZ, FDW2509NZ Schematic [ru]

January 2005

FDW2509NZ

FDW2509NZ

Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).

Applications

Li-Ion Battery Pack

G2

S2

S2

D2

G1

S1

S1

D1

TSSOP-8

Pin 1

Features

• 7.1 A, 20 V. R
R

• Extended V

• ESD protection diode (note 3)

• High performance trench technology for extremely

low R

DS(ON)

• Low profile TSSOP-8 package

= 20 mΩ @ VGS = 4.5 V

DS(ON)

= 26 mΩ @ VGS = 2.5 V

DS(ON)

range (±12V) for battery applications

GSS

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 20 V
Gate-Source Voltage

±12

Drain Current – Continuous (Note 1a) 7.1 A

– Pulsed 30

Power Dissipation for Single Operation (Note 1a) 1.6 W

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

1.1
°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 77

(Note 1b)

114

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2509NZ FDW2509NZ 13’’ 12mm 3000 units

2005 Fairchild Semiconductor Corporation

FDW2509NZ Rev C(W)

Electrical Characteristics T

D(on)

FDW2509NZ

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSS

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

V

= 0 V, ID = 250 µA

GS

I

= 250 µA, Referenced to 25°C

D

20 V

11

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage

V

= ±12 V, VDS = 0 V ± 10 µA

GS

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I
g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

(Note 4) On–State Drain Current V

V

= VGS, ID = 250 µA

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 4.5 V, ID = 7.1 A
V

= 2.5 V, ID = 6.2 A

GS

= 4.5 V, ID = 7.1A, TJ=125°C

V

GS

= 4.5 V, VDS = 5 V 30 A

GS

0.6 0.8 1.5 V

Forward Transconductance VDS = 5 V, ID = 7.1 A 36 S

–3
15

18
20

20
26
29

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Input Capacitance 1263 pF
Output Capacitance 327 pF
Reverse Transfer Capacitance

VDS = 10 V, V
f = 1.0 MHz

GS

= 0 V,

179 pF

Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn–On Delay Time 11 20 ns
Turn–On Rise Time 15 27 ns

= 10 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 27 43 ns
Turn–Off Fall Time

Total Gate Charge 13 19 nC
Gate–Source Charge 2 nC

= 10 V, ID = 7.1 A,

V

DS

V

= 4.5 V

GS

Gate–Drain Charge

12 22 ns

4 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

a) R

θJA

b) R

θJA

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. I

parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics).

D(on)

Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward

VGS = 0 V, IS = 1.3 A (Note 2) 1.2 V
Voltage
Diode Reverse Recovery Time IF = 7.1 A, diF/dt = 100 A/µs 20 nS

Diode Reverse Recovery Charge 14 nC

is guaranteed by design while R

θJC

is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.

is determined by the user's board design.

θCA

µA

Ω

FDW2509NZ Rev. C(W)

Typical Characteristics

DRAIN-SOURCE ON-RESISTANCE

, REVERSE DRAIN CURRENT (A)

FDW2509NZ

30

VGS = 4.5V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 1 2 3 4

2.5V

3.5V

VDS, DRAIN-SOURCE VOLTAGE (V)

2.0V

1.8V

1.8

VGS = 2.0V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

0.8
0 5 10 15 20 25 30

2.5V

3.0V

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
ID = 7.1A

VGS = 4.5V

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

0.05

0.04

0.03

TA = 25oC

, ON-RESISTANCE (OHM)

0.02

DS(ON)

R

0.01
1 2 3 4 5

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

3.5V

4.5V

ID = 3.6A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = 5V

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0.5 1 1.5 2 2.5

VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

25

125oC

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDW2509NZ Rev. C(W)

Typical Characteristics

r(t), NORMALIZED EFFECTIVE TRANSIENT

P(pk)

0.2

FDW2509NZ

5

ID = 7.1A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 4 8 12 16

Qg, GATE CHARGE (nC)

VDS = 5V

15V

10V

2000

1500

1000

CAPACITANCE (pF)

500

C

RSS

0

0 4 8 12 16 20

C

ISS

C

OSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1s

1

VGS = 4.5V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

I

R

= 114oC/W

θJA

TA = 25oC

0.01

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10s

DC

10ms

100us

1ms

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

SINGLE PULSE
R

θ

JA

TA = 25°C

= 114°C/W

f = 1MHz

VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.1

0.1

0.05

0.02

0.01

THERMAL RESISTANCE

0.01

SINGLE PULSE

R

(t) = r(t) * R

θJA

R

=114 °C/W

JA

θ

TJ - TA = P * R

Duty Cycle, D = t1 / t

θJA

t

1

t

2

θJA

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDW2509NZ Rev. C(W)

(t)

2

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CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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As used herein:

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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I15