Fairchild FDW2506P, FDW2506P Schematic [ru]
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
FDW2506P
October 2000
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
G
2
S
2
S
2
D
2
G
1
S
1
S
1
D
1
TSSOP-8
Pin 1
Features
• –5.3 A, –20 V, R
R
• Extended V
range (±12V) for battery applications
GSS
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
1
2
3
4
= 0.022 Ω @ VGS = –4.5 V.
DS(ON)
= 0.033 Ω @ VGS = –2.5V.
DS(ON)
8
7
6
5
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
±12
Drain Current – Continuous (Note 1) –5.3 A
– Pulsed –30
Power Dissipation for Single Operation (Note 1a) 1.0 W
(Note 1b)
0.6
Operating and Storage Junction Temperature Range -55 to +150
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 125
(Note 1b)
208
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2506P FDW2506P 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
FDW2506P Rev. C (W)
V
°C
FDW2506P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
===∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = –250 µA
GS
ID = –250 µA, Referenced to 25°C
–20 V
–12
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
===∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = –250 µA
DS
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –5.3 A
= –2.5 V, ID = –4.4 A
V
GS
= –4.5 V, ID = –5.3 A, TJ=125°C
V
GS
–0.6 –0.8 –1.5 V
3
0.018
0.026
0.023
On–State Drain Current VGS = –4.5 V, VDS = –5 V –30 A
Forward Transconductance VDS = –5 V, ID = –5.3 A 24 S
mV/°C
0.022
0.033
0.035
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1015 pF
Output Capacitance 446 pF
Reverse Transfer Capacitance
V
= –10 V, V
DS
f = 1.0 MHz
GS
= 0 V,
118 pF
Switching Characteristics (Note 2)
= –5 V, ID = –1 A,
V
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 13 23 ns
Turn–On Rise Time 17 31 ns
Turn–Off Delay Time 75 120 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 21 34 nC
Gate–Source Charge 4.5 nC
Gate–Drain Charge
DD
= –4.5 V, R
V
GS
V
= –10V, ID = –5.3 A,
DS
V
= –4.5 V
GS
GEN
= 6 Ω
38 61 ns
6nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current –0.83 A
Drain–Source Diode Forward
VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –1.2 V
Voltage
is guaranteed by design while R
θJC
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
θJA
is determined by the user's board design.
θCA
µA
Ω
FDW2506P Rev. C (W)
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