Fairchild FDV305N service manual

January 2003

FDV305N

20V N-Channel PowerTrench MOSFET

FDV305N

General Description

This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.

Applications

• Load switch

• Battery protection

• Power management

Features

• 0.9 A, 20 V R

R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

DS(ON)

low R

= 220 mΩ @ VGS = 4.5 V

DS(ON)

= 300 mΩ @ VGS = 2.5 V

DS(ON)

D

D

S

G

SOT-23

Absolute Maximum Ratings T

G

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage 20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous 0.9 A

– Pulsed 2

PD

TJ, T

STG

Maximum Power Dissipation 0.35

Operating and Storage Junction Temperature Range –55 to +150

± 12

S

V

W

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

357

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

305 FDV305N 7’’ 8mm 3000 units

2003 Fairchild Semiconductor Corporation

°C/W

FDV305N Rev D (W)

FDV305N

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

I

= 250 µA,Referenced to 25°C

D

20 V

15

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 4.5V, VDS = 5 V 1 A

D(on)

= VGS, ID = 250 µA

V

DS

I

= 250 µA,Referenced to 25°C

D

= 4.5 V, ID = 0.9 A

V

GS

= 2.5 V, ID = 0.7 A

V

GS

= 4.5V, ID = 0.9 A, TJ = 125°C

V

GS

gFS Forward Transconductance VDS = 5V, ID = 0.9 A 3 S

0.6 1 1.5 V

–3

164
235
220

220
300
303

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 109 pF

iss

C

Output Capacitance 30 pF

oss

C

Reverse Transfer Capacitance

rss

V

= 10 V, V

DS

f = 1.0 MHz

= 0 V,

GS

14 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 4.5 9 ns

d(on)

tr Turn–On Rise Time 7 14 ns

t

Turn–Off Delay Time 8 16 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 1.1 1.5 nC

Qgs Gate–Source Charge 0.26 nC

Qgd Gate–Drain Charge

= 10 V, ID = 1 A,

V

DD

= 4.5 V, R

V

GS

= 10 V, ID = 0.9 A,

V

DS

= 4.5 V

V

GS

GEN

= 6 Ω

1.4 2.8 ns

0.26 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 0.29 A

VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time 7.4 nS

Qrr Diode Reverse Recovery Charge

Notes:

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VGS = 0 V, IS = 0.29 A 0.75 1.2 V

= 0.9 A,

I

F

= 100 A/µs

d

iF/dt

2.2 nC

FDV305N Rev D (W)