Fairchild FDD8782, FDU8782 service manual
November 2009
FDD8782/FDU8782
N-Channel PowerTrench® MOSFET
25V, 35A, 11mΩ
FDD8782/FDU8782 N-Channel PowerTrench
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
DS
(TO-251AA)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
-Pulsed (Note 1) 321
Single Pulse Avalanche Energy (Note 2) 72 mJ
Power Dissipation 50 W
Operating and Storage Temperature -55 to 175 °C
= 25°C unless otherwise noted
C
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
Avalanche rated and 100% tested
RoHS Compliant
I-PAK
= 11.0mΩ at V
DS(on)
= 14.0mΩ at V
DS(on)
G
D
S
Short Lead I-PAK
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 18nC(Typ), VGS = 10V
g(10)
G
Thermal Characteristics
D
®
MOSFET
S
A -Continuous (Die Limited) 54
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8782 FDD8782 TO-252AA 13’’ 12mm 2500 units
FDU8782 FDU8782 TO-251AA N/A(Tube) N/A 75 units
FDU8782 FDU8782_F071 TO-251AA N/A(Tube) N/A 75 units
©2009 Fairchild Semiconductor Corporation
FDD8782/FDU8782 Rev. A1
www.fairchildsemi.com1
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
ΔB
ΔT
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250μA, referenced to
25
°C
VDS = 20V,
V
GS
= 0V
TJ = 150°C 250
14.3 mV/°C
1
Gate to Source Leakage Current VGS = ±20V ±100 nA
FDD8782/FDU8782 N-Channel PowerTrench
μA
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1.2 1.7 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 230 310 pF
Reverse Transfer Capacitance 160 240 pF
Gate Resistance f = 1MHz 1.4 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 9 18 ns
Turn-Off Delay Time 22 36 ns
Fall Time 14 25 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 3.1 nC
Gate to Drain “Miller”Charge 4.0 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300us,Duty cycle = 2%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/μs 25 38 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/μs 17 26 nC
= 25oC, L = 1.0mH, IAS = 12A ,VDD = 23V, VGS = 10V.
J
ID = 250μA, referenced to
25
°C
-6.5 mV/°C
VGS = 10V, ID = 35A 8.5 11 .0
VGS = 4.5V, ID = 35A 11. 0 14.0
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 13V, VGS = 0V,
12.1 18.0
920 1220 pF
f = 1MHz
7 14 ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 9Ω
= 0V to 10V
GS
= 0V to 5V 9.4 13 nC
GS
V
= 0V, IS = 35A 0.96 1.25
GS
V
= 0V, IS = 15A 0.86 1.2
GS
VDD = 13V
I
= 35A
D
Ig = 1.0mA
18 25 nC
mΩ
®
MOSFET
V
FDD8782/FDU8782 Rev. A1 www.fairchildsemi.com2
Loading...