Fairchild FDT86244 service manual

FDT86244

G

D

S

D

SOT-223

SG

D

D

N-Channel Power Trench® MOSFET

150 V, 2.8 A, 128 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 Fast switching speed
 100% UIL Tested
 RoHS Compliant

= 128 mΩ at VGS = 10 V, ID = 2.8 A

DS(on)

= 178 mΩ at VGS = 6 V, ID = 2.4 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.

Applications

 Load Switch
 Primary Switch

May 2011

®

process that has

, switching performance and

DS(on)

FDT86244 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.C

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 2.8

-Pulsed 12
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.2
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 12
Thermal Resistance, Junction to Ambient (Note 1a) 55

86244 FDT86244 SOT-223 13 ’’ 12 mm 2500 units

= 25 °C unless otherwise noted

C

= 25 °C (Note 1b) 1.0

A

1

A

W

°C/W

www.fairchildsemi.com

FDT86244 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 104 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -10 mV/°C

D

V

= 10 V, ID = 2.8 A 106 128

GS

= 6 V, ID = 2.4 A 127 178

GS

= 10 V, ID = 2.8 A, TJ = 125 °C 196 237

V

GS

Forward Transconductance VDS = 10 V, ID = 2.8 A 12 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 33 45 pF
Reverse Transfer Capacitance 2.4 5 pF
Gate Resistance 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.3 10 ns
Turn-Off Delay Time 9.8 20 ns
Fall Time 2.4 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.4 nC
Gate to Drain “Miller” Charge 1.3 nC

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

= 75 V, ID = 2.8 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 2.8 4 nC

GS

GEN

= 6 Ω

V

DD

I

= 2.8 A

D

= 75 V,

295 395 pF

5.3 11 ns

4.9 7 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mo unted on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 m aterial. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2011 Fairchild Semiconductor Corporation
FDT86244 Rev.C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 44 70 nC

= 25 °C; N-ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V.

J

a)

55 °C/W when mounted on a

2

pad of 2 oz copper

1 in

= 0 V, IS = 2.8 A (Note 2) 0.82 1.3 V

GS

= 2.8 A, di/dt = 100 A/μs

I

F

2

θJC

118 °C/W when mounted on

b)

a minimum pad of 2 oz copper

48 77 ns

is guaranteed by design while R

θCA

is determined by

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