Fairchild FDT86102LZ service manual
FDT86102LZ
G
D
S
D
SOT-223
N-Channel PowerTrench® MOSFET
100 V, 6.6 A, 28 mΩ
FDT86102LZ N-Channel PowerTrench
November 2010
Features
Max r
Max r
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
= 28 mΩ at V
DS(on)
= 38 mΩ at V
DS(on)
= 10 V, ID = 6.6 A
GS
= 4.5 V, ID = 5.5 A
GS
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
®
process that has
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 6.6
-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.2
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 1.0
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 12
Thermal Resistance, Junction to Ambient (Note 1a) 55
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
86102LZ FDT86102LZ SOT-223 13 ’’ 12 mm 2500 units
©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDT86102LZ Rev. C
FDT86102LZ N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 70 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±10 μA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.4 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 6.6 A 22 28
GS
= 4.5 V, ID = 5.5 A 27 38
GS
= 10 V, ID = 6.6 A, TJ = 125 °C 36 46
V
GS
Forward Transconductance VDS = 5 V, ID = 6.6 A 26 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 181 245 pF
Reverse Transfer Capacitance 7.5 15 pF
= 50 V, VGS = 0 V,
V
DS
f = 1MHz
Gate Resistance 0.5 Ω
1118 1490 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 1.9 10 ns
Turn-Off Delay Time 19 31 ns
= 50 V, ID = 6.6 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 2.2 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2.6 nC
= 0 V to 10 V
GS
= 0 V to 4.5 V 8.3 12
GS
V
DD
I
= 6.6 A
D
= 50 V,
Gate to Drain “Miller” Charge 2.2 nC
6.6 14 ns
17 25 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 6.6 A (Note 2) 0.82 1.3
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR -4 mater ial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. Starting T
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDT86102LZ Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 36 58 nC
a)
55 °C/W when mounted on a
2
1 in
pad of 2 oz copper
= 25 °C, L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.
J
GS
= 0 V, IS = 1 A (Note 2) 0.68 1.2
V
GS
= 6.6 A, di/dt = 100 A/μs
I
F
θJC
40 64 ns
is guaranteed by design while R
118 °C/W when mounted on
b)
a minimum pad of 2 oz copper
is determined by
θCA
V
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