Fairchild FDT439N service manual
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
FDT439N
June 1999
General Description
This N-Channel Enhancement mode field effect transistor
is produced using Fairchild Semiconductor's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize onstate resistance, and provide superior switching
performance. These products are well suited to low
voltage, low current applications such as notebook
computer power management, battery powered
circuits, and DC motor control.
Applications
DC/DC converter
Load switch
Motor driving
G
D
DS
TA = 25°C unless otherwise noted
D
S
D
SOT-223
G
Absolute Maximum Ratings
Features
6.3 A, 30 V. R
R
= 0.045 Ω @ V
DS(on)
= 0.058 Ω @ V
DS(on)
= 4.5 V
GS
= 2.5 V
GS
Fast switching speed.
High power and current handling capabitlity in a
widely used surface mount package.
D
SOT-223
(J23Z)
S
G
*
D
G
S
Symbol Parameter FDT439N Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
8V
±
6.3 A
- Pulsed 20
Power Dissipation for Si ngl e Operation
(Note 1a)
(Note 1b)
(Note 1c)
3W
1.3
1.1
Operating and Storage Junction Temperat ure Range -55 to +150
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, J unction-to-Case
(Note 1a)
(Note 1)
42
12
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDT439N FDT439N 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
C
°
C/W
°
C/W
°
FDT439N, Rev. C
FDT439N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
30 V
40
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 4.5 V, ID = 6.3 A
V
= 4.5 V, ID = 6.3 A, TJ=125°C
GS
V
= 2.5 V, ID = 5.5A
GS
On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A
Forward Transconductance VDS = 5 V, ID = 6.3 A 17 S
0.4 0.67 1 V
-2.2
0.038
0.055
0.048
mV/°C
0.045
0.072
0.058
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 500 pF
Output Capacitance 185 pF
Reverse Transfer Capacitance
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
43 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 6 12 ns
Turn-On Rise Time 10 18 ns
= 15 V, ID = 1 A,
V
DD
V
= 4.5 V, R
GS
GEN
= 6 Ω
Turn-Off Delay Time 30 48 ns
Turn-Off Fall Time
Total Gate Charge 10.7 15 nC
Gate-Source Charge 0.9 nC
V
= 15 V, ID = 6.3 A,
DS
= 4.5 V,
V
GS
Gate-Drain Charge
10 18 ns
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
R
θJC
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 2.5 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.8 1.2 V
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
is determined by the user's board design.
θCA
a) 42° C/W when
mounted on a 1 in
pad of 2 oz. copper.
2
b) 95° C/W when
mounted on a 0.066 in
pad of 2 oz. copper.
2
c) 110° C/W when
mounted on a minimum
mounting pad.
FDT439N, Rev. C
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