Fairchild FDS9933BZ service manual
tm
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
-20V, -4.9A, 46mΩ
Features
Max r
Max r
Low gate charge (11nC typical).
High performance trench technology for extremely low r
HBM ESD protection level >3kV (Note 3).
RoHS Compliant
= 46mΩ at VGS = -4.5V, ID = -4.9A
DS(on)
= 69mΩ at VGS = -2.5V, ID = -4.0A
DS(on)
DS(on).
General Description
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Battery Charging
Load Switching
March 2008
®
process
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench
D2
D2
D1
D1
G2
S2
G1
SO-8
S1
= 25°C unless otherwise noted
A
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±12 V
Drain Current -Continuous TA = 25°C (Note 1a) -4.9
-Pulsed -30
Power Dissipation (Note 1a) 1.6
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C
D2
D2
D1
D1
G2
5
6
Q1Q2Q2Q1Q1Q2Q2
7
Q1
8
4
S2
3
G1
2
1
S1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 40
Thermal Resistance, Junction to Ambient (Note 1a) 78
Package Marking and Ordering Information
®
MOSFET
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS9933BZ FDS9933BZ SO-8 330mm 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com
FDS9933BZ Dual P-Channel 2.5V Specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16V, V
Gate to Source Leakage Current VGS = ±12V, V
ID = -250µA, referenced to 25°C -9 mV/°C
= 0V 1 µA
GS
= 0V ±10 µA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -0.4 -0.9 -1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = -10V, ID = -4.9A 17 S
ID = -250µA, referenced to 25°C 3 mV/°C
VGS = -4.5V, ID = -4.9A 38 46
VGS = -4.5V , ID = -4.9A, TJ = 125°C 52 67
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 160 215 pF
Reverse Transfer Capacitance 145 220 pF
VDS = -10V, VGS = 0V,
f = 1MHz
740 985 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 9.3 19 ns
Turn-Off Delay Time 59 95 ns
VDD = -10V, ID = -4.9A,
VGS = -4.5V, R
GEN
= 6Ω
6.7 14 ns
Fall Time 47 76 ns
Total Gate Charge
Gate to Source Gate Charge 1.4 nC
VDD = -10V, ID = -4.9A
V
= -4.5V
GS
11 15 nC
Gate to Drain “Miller” Charge 3.7 nC
mΩVGS = -2.5V, ID = -4.0A 54 69
®
MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
Maximum continuous Drain-Sourse Diode Forward Current -1.3 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 23 37 nC
a) 78°C/W when mounted on a 1 in2
pad of 2 oz copper
= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V
GS
IF = -4.9A, di/dt = 100A/µs
2
46 74 ns
is guaranteed by design while R
θJC
b) 135°C/W when mounted on a
minimun pad
is determined by
θCA
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