Fairchild FDS9933A service manual
FDS9933A
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Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS9933A
November 1998
General Description
These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
• -3.8 A, -20 V. R
R
= 0.075 Ω @ V
DS(on)
= 0.105 Ω @ V
DS(on)
• Low gate charge ( 7nC typical ).
= -4.5 V
GS
= -2.5 V.
GS
• Fast switching speed.
Applications
• Load switch
• DC/DC converter
• High performance trench technology for extremely
low R
DS(on)
.
• High power and current handling capability .
• Motor drives
D2
D2
D1
D1
S2
G1
1
SO-8
pin
S1
Absolute Maximum Ratings
G2
T
=25oC unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter FDS9933A Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
Note 1a
8V
±
-3.8 A
- Pulsed -20
Power Dissipation for Dual Operation 2.0
Power Dissipation for Single Operation
Note 1a
Note 1b
Note 1c
1.6
1.0
0.9
Operating and Storage Junction Temperature Range -55 to +150
W
C
°
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width
FDS9933A FDS9933A 13’’ 12mm 2500 units
1998 Fairchild Semiconductor Corporation
(Note 1a)
(Note 1)
78
40
C/W
°
C/W
°
Quantity
FDS9933A Rev. C
FDS9933A
DMOS Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆Β
∆
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
DSS
Breakdown Voltage Temperature
DSS
V
Coefficient
T
J
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
ID = -250 µA, Referenced to 25°C-16mV/
A
µ
Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C2.5mV/
VGS = -4.5 V, ID = -3.8 A
V
= -4.5 V, ID = -3.8 A, TJ = 125°C
GS
V
= -2.5 V, ID = -3.3 A
GS
0.058
0.086
0.084
On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -10 A
Forward Transconductance VDS = -4.5 V, ID = -3.8 A 10 S
0.075
0.12
0.105
Ω
Ω
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 600 pF
Output Capacitance 175 pF
Reverse Transfer Capacitance 80 pF
Switching Characteristics (Note 2)
C
°
C
°
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time VDD = -5 V, ID = -0.5 A, 6 12 ns
Turn-On Rise Time VGS = -4.5 V, R
GEN
= 6.0
Ω
918ns
Turn-Off Delay Time 31 50 ns
Turn-Off Fall Time 28 42 ns
Total Gate Charge VDS = -10 V, ID = -3.8 A, 7 10 nC
Gate-Source Charge VGS = -4.5 V 1.3 nC
Gate-Drain Charge 2 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward
VGS = 0 V, IS = -1.3 A
(Note 2)
-0.75 -1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 78° C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
is determined by the user's board design.
θJA
2
b) 125° C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
2
c) 135° C/W when
mounted on a 0.003 in
pad of 2 oz. copper.
2
FDS9933A Rev. C
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