Fairchild FDS8935 service manual
FDS8935 Dual P-Channel PowerTrench
G2
S1
G1
S2
D2
D2
D1
D1
5
6
7
8
3
2
1
4
Pin 1
SO-8
D1
D1
D2
D2
S2
S1
G1
G2
4
3
2
1
5
6
7
8
Q2
Q1
FDS8935
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 183 mΩ at V
DS(on)
= 247 mΩ at V
DS(on)
= -10 V, ID = -2.1 A
GS
= -4.5 V, ID = -1.9 A
GS
DS(on)
General Description
This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for r
ruggedness.
Applications
Load Switch
Synchronous Rectifier
November 2010
, switching performance and
DS(on)
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage -80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous -2.1
-Pulsed -10
Single Pulse Avalanche Energy (Note 3) 37 mJ
Power Dissipation TA = 25 °C (Note 1a) 3.1
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C (Note 1b) 1.6
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 40
Thermal Resistance, Junction to Ambient (Note 1a) 78
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS8935 FDS8935 SO-8 13 ’’ 12 mm 2500 units
1
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
www.fairchildsemi.com
FDS8935 Dual P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -64 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= -250 μA, referenced to 25 °C -61 mV/°C
D
= 0 V -1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-1-1.8-3V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 μA, referenced to 25 °C 5 mV/°C
D
V
= -10 V, ID = -2.1 A 148 183
GS
= -4.5 V, ID = -1.9 A 176 247
GS
= -10 V , ID = -2.1 A,TJ = 125 °C 249 308
V
GS
Forward Transconductance VDS = -10 V, ID = -2.1 A 6.4 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 47 63 pF
Reverse Transfer Capacitance 24 36 pF
= -40 V, VGS = 0 V,
V
DS
f = 1MHz
Gate Resistance 6 Ω
661 879 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 22 36 ns
= -40 V, ID = -2.1 A,
V
DD
V
= -10 V, R
GS
GEN
= 6 Ω
Fall Time 310ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 1.6 nC
= 0 V to -10 V
GS
= 0 V to -5 V 7 10 nC
GS
= -40 V,
V
DD
I
= -2.1 A
D
Gate to Drain “Miller” Charge 2.6 nC
510ns
13 19 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting T
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 34 54 nC
= 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V.
J
a)78 °C/W when
mounted on a 1 in2
pad of 2 oz copper
V
= 0 V, IS = -2.1 A (Note 2) -1.8 -1.3
GS
= 0 V, IS = -1.3 A (Note 2) -0.8 -1.2
V
GS
= -2.1 A, di/dt = 300 A/μs
I
F
2
θJC
b)135 °C/W when
mounted on a
minimun pad
19 30 ns
is guaranteed by design while R
V
is determined by
θCA
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