Fairchild FDS8882 service manual
FDS8882
N-Channel PowerTrench® MOSFET
30 V, 9 A, 20.0 mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
= 20.0 mΩ at V
DS(on)
= 22.5 mΩ at V
DS(on)
= 10 V, ID = 9 A
GS
= 4.5 V, ID = 8 A
GS
DS(on)
General Description
The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance.
DS(on)
Applications
Notebook System Regulators
DC/DC Converters
December 2008
silicon and
FDS8882 N-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 9
-Pulsed 21
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
= 25 °C unless otherwise noted
A
G
S
S
= 25 °C (Note 1b) 1.0
A
5
D
6
D
7
D
8
D
G
4
S
3
S
2
1
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8882 FDS8882 SO8 13 “ 12 mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
1
www.fairchildsemi.com
FDS8882 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 4 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 9 A 13.2 20.0
GS
= 4.5 V, ID = 8 A 16.6 22.5
GS
= 10 V, ID = 9 A, TJ =125 °C 18.5 28.0
V
GS
Forward Transconductance VDS = 5 V, ID = 9 A 36 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 138 185 pF
Reverse Transfer Capacitance 88 135 pF
Gate Resistance 1.8 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 19 35 ns
Fall Time 410ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2.2 nC
Gate to Drain “Miller” Charge 2.8 nC
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
VDD = 15 V, ID = 9 A,
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V 8 11 nC
GS
GEN
= 6 Ω
VDD = 15 V,
I
= 9 A
D
707 940 pF
714ns
14 20 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounte d on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
©2008 Fairchild Semiconductor Corporation
FDS8882 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 6 12 nC
= 25 °C, L = 1 mH, IAS = 8 A, VDD = 27 V, VGS = 10 V.
J
a) 50 °C/W whe n mounted on a
1 in2 pad of 2 oz copper.
V
= 0 V, IS = 9 A 0.8 1.2
GS
= 0 V, IS = 2.1 A 0.7 1.2
V
GS
= 9 A, di/dt = 100 A/µs
I
F
2
θJC
17 31 ns
is guaranteed by design while R
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
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