Fairchild FDS8840NZ service manual
FDS8840NZ
N-Channel PowerTrench® MOSFET
40 V, 18.6 A, 4.5 mΩ
Features
Max r
Max r
HBM ESD protection level of 6 kV typical(note 3)
High performance trench technology for extremely low r
and fast switching
High power and current handling capability
Termination is Lead-free and RoHS Compliant
= 4.5 mΩ at VGS = 10 V, ID = 18.6 A
DS(on)
= 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A
DS(on)
DS(on)
General Description
The FDS8840NZ has been designed to minimize losses in
power conversion application. Advancements in both
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance.
DS(on)
Applications
Synchronous Buck for Vcore and Server
Notebook Battery Pack
Load Switch
April 2009
silicon and
FDS8840NZ N-Channel Power Trench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18.6
-Pulsed 63
Single Pulse Avalanche Energy (Note 4) 600 mJ
Power Dissipation TA = 25 °C (Note 1a) 2.5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25 °C unless otherwise noted
= 25 °C (Note 1b) 1.0
A
D
D
D
D
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
G
S
S
S
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS8840NZ FDS8840NZ SO8 13 ’’ 12 mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
1
www.fairchildsemi.com
FDS8840NZ N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 31 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±10 µA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 1.8 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 18.6 A 3.9 4.5
GS
= 4.5 V, ID = 14.9 A 4.6 6.0
GS
= 10 V, ID = 18.6 A, TJ =125 °C 5.9 7.0
V
GS
Forward Transconductance VDS = 5 V, ID = 18.6 A 83 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 650 865 pF
Reverse Transfer Capacitance 445 670 pF
= 20 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.2 Ω
5665 7535 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 13 23 ns
Turn-Off Delay Time 57 103 ns
VDD = 20 V, ID = 18.6 A,
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 11 20 ns
g
g
gs
gd
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 16 nC
Gate to Drain “Miller” Charge 19 nC
= 0 V to 10 V
GS
= 0 V to 5 V 54 76 nC
GS
VDD = 20 V,
I
= 18.6 A
D
18 32 ns
103 144 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 18.6 A 0.8 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR -4 materia l. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T
©2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 21 34 nC
a) 50 °C/W when m ounted on a
1 in2 pad of 2 oz copper.
= 25 °C, L = 3 mH, IAS = 20 A, VDD = 40 V, VGS = 10 V.
J
GS
= 0 V, IS = 2.1 A 0.7 1.2
V
GS
= 18.6 A, di/dt = 100 A/µs
I
F
2
33 53 ns
is guaranteed by design while R
θJC
b) 125 °C/W when mounted on a
minimum pad.
V
is determined by
θCA
www.fairchildsemi.com
Loading...