Fairchild FDS8817NZ service manual
FDS8817NZ
Pin 1
SO-8
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
N-Channel PowerTrench® MOSFET
30V, 15A, 7.0mΩ
Features
Max r
Max r
HBM ESD protection level of 3.8KV typical (note 3)
High performance trench technology for extremely low r
High power and current handling capability
RoHS compliant
DS(on)
DS(on)
= 7mΩ at V
= 10mΩ at V
= 10V, ID = 15A
GS
= 4.5V, ID =12.6A
GS
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
November 2008
®
process that has
FDS8817NZ N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS8817NZ FDS8817NZ 13” 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDS8817NZ Rev.C1
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 15
-Pulsed 60
Single Pulse Avalanche Energy (Note 4) 181 mJ
Power Dissipation (Note 1a) 2.5
Power Dissipation (Note 1b) 1.0
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Thermal Resistance, Junction to Ambient (Note 1b) 125
= 25°C unless otherwise noted
A
A
W
°C/WR
1
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FDS8817NZ N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250μA, referenced to 25°C 20 mV/°C
= 0V 1 μA
GS
= 0V ±10 μA
DS
On Characteristics (Note 2)
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1 1.8 3 V
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C –6 mV/°C
VGS = 10V, ID = 15A 5.4 7
Static Drain to Source On Resistance
VGS = 10V, ID = 15A TJ = 125°C 7.5 11
Forward Transconductance VDS = 5V, ID = 15A 54 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 335 445 pF
Reverse Transfer Capacitance 200 300 pF
VDS = 15V, VGS = 0V,
f = 1MHz
1805 2400 pF
Gate Resistance f = 1MHz 1.4 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 13 26 ns
Turn-Off Delay Time 25 40 ns
VDD = 15V, ID = 15A
VGS = 10V, R
GEN
= 6Ω
11 22 ns
Fall Time 7 14 ns
Total Gate Charge VGS = 0V to 10V
Total Gate Charge VGS = 0V to 5V 17 24 nC
VDD = 15V
ID = 15A
32 45 nC
Gate to Source Charge 6 nC
Gate to Drain “Miller” Charge 7 nC
mΩVGS = 4.5V, ID = 12.6A 7.0 10
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
θJA
pins. R
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting T
FDS8817NZ Rev.C1
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 15 23 nC
is the sum of the junction-to-case and case -to - am bi e nt t her mal r esistance where the case thermal referen ce i s d efi n ed as the solder mounting surface of the drain
is guaranteed by design while R
θJC
= 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V.
J
is determined by the user’s board design.
θJA
a) 50°C/W when mounted on a
2
1in
pad of 2 oz copper.
= 0V, IS = 2.1A (Note 2) 0.8 1.2 V
GS
IF = 15A, di/dt = 100A/μs
2
24 36 ns
b) 125°C/W when mounted on a
minimum pad .
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