Fairchild FDS8690 service manual
FDS8690
N-Channel PowerTrench
30V, 14A, 7.6mΩ
®
MOSFET
FDS8690 N-Channel PowerTrench
January 2006
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Applications
Notebook CPU power supply
Synchronous rectifier
Absolute Maximum Ratings T
= 25°C unless otherwise Noted
A
Features
Max r
Max r
High performance trench technology for extremely low
r
DS(on)
Very low gate charge
High power and current handling capability
100% R
RoHS Compliant
= 7.6mΩ, V
DS(on)
= 11.4mΩ, V
DS(on)
and fast switching
tested
G
= 10V, ID = 14A
GS
= 4.5V, ID = 11.5A
GS
A
E
L
E
E
R
F
I
D
M
P
L
E
O
N
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 14
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 210 mJ
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1c) 1.0
, T
T
J
STG
Operating and Storage Temperature -55 to +150 °C
®
MOSFET
M
E
N
T
A
T
I
A
W (Note 1b) 1.2
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction to Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS8690 FDS8690 13” 12mm 2500 units
©2006 Fairchild Semiconductor Corporation
FDS8690 Rev. B
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FDS8690 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆B
∆T
I
DSS
I
GSS
DSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
ID = 250µA, referenced to
25°C
= 0V 1 µA
GS
34.3 mV/°C
Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics (Note 2)
V
GS(th)
∆V
GS(th)
∆T
r
DS(ON)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA11.63V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
ID = 250µA , r e f e r e n c e d t o
25°C
= 10V, ID = 14A 6.3 7.6
V
GS
V
= 4.5V, I
GS
= 10V, ID = 14A,
V
GS
T
= 125°C
J
= 11.5A 8.6 11.4
D
- 4.5 mV/°C
9.0 10.9
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 535 715 pF
Reverse Transfer Capacitance 80 120 pF
V
= 15V, VGS = 0V,
DS
f = 1MHz
1260 1680 pF
Gate Resistance f = 1MHz 1.1 Ω
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 1.8 10 ns
V
= 15V, ID = 1A,
DS
V
= 10V, R
GS
GS
= 6Ω
Turn-Off Delay Time 26 42 ns
Fall Time 19 35 ns
V
= 15V, VGS = 10V
g
g
gs
gd
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 3.5 nC
Gate to Drain Charge 2.9 nC
DS
I
= 14A
D
V
= 15V, VGS = 5V
DS
I
= 14A
D
8.0 16 ns
18.8 27 nC
10 14 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1. R
of the drain pins. R
2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
3. Starting T
FDS8690 Rev. B
Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A 0.7 1.2 V
Reverse Recovery Time IF = 14A, di/dt = 100A/µs45ns
Reverse Recovery Charge IF = 14A, di/dt = 100A/µs33nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
θJA
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1 in
pad of 2 oz copper
= 25oC, L = 3mH, I
J
AS
= 11.8A , V
is determined by the user’s board design.
θCA
2
DD
= 24V, V
GS
b)105°C/W when
mounted on a .04 in
pad of 2 oz copper
= 10V.
2
c) 125°C/W when
mounted on a
minimun pad
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