Fairchild FDS86540 service manual
FDS86540
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
Max r
Max r
High performance trench technologh for extremely low r
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 4.5 mΩ at VGS = 10 V, ID = 18 A
DS(on)
= 5.4 mΩ at VGS = 8 V, ID = 16.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
May 2012
, fast switching speed and body
DS(on)
.
FDS86540 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86540 FDS86540 SO-8 13’’ 12
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 18
-Pulsed 120
Single Pulse Avalanche Energy (Note 3) 194 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
mm 2500 units
www.fairchildsemi.com
FDS86540 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V60 V
D
I
= 250 μA, referenced to 25 °C 28 mV/°C
D
= 48 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 18 A 3.74.5
GS
= 8 V, ID = 16.5 A4.25.4
GS
= 10 V, I
V
GS
= 10 V, ID = 18 A69S
DS
= 250 μA23.14V
D
= 18 A, T
D
= 125 °C 5.9 7
J
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1610 2145 pF
Reverse Transfer Capacitance 67 130 pF
Gate Resistance 0.6 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 15 27 ns
Turn-Off Delay Time 33 53 ns
Fall Time 7.1 15 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 22 nC
Gate to Drain “Miller” Charge 13 nC
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
= 30 V, ID = 18 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 8 V5375nC
GS
GEN
= 6 Ω
V
DD
I
= 18 A
D
= 30 V,
4820 6410 pF
28 45 ns
65 90 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mate rial . R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 44 71 nC
= 25 °C, L = 0.3 mH, IAS = 36 A, VDD = 54 V, VGS = 10 V.
J
V
V
I
a) 50 °C/W wh en mounted on a
2
1 in
pad of 2 oz copper.
= 0 V, I
GS
= 0 V, IS = 2 A (Note 2) 0.7 1.2
GS
= 18 A, di/dt = 100 A/μs
F
= 18 A (Note 2) 0.8 1.3
S
57 92 ns
is guaranteed by design while R
θJC
b) 125 °C/W when mounted on a
minimum pad.
2
V
is determined by
θCA
www.fairchildsemi.com
Loading...