Fairchild FDS86252 service manual

FDS86252

SO-8

D

D

D

D

S

S

S

G

Pin 1

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

N-Channel Power Trench® MOSFET

150 V, 4.5 A, 55 mΩ

Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested
 RoHS Compliant

= 55 mΩ at VGS = 10 V, ID = 4.5 A

DS(on)

= 80 mΩ at VGS = 6 V, ID = 3.7 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintaiin superior switching performance.

Application

 DC-DC Conversion

April 2011

®

process that has

FDS86252 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS86252 FDS86252 SO-8 13 ’’ 12 mm 2500 units

©2011 Fairchild Semiconductor Corporation
FDS86252 Rev. C

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 4.5

-Pulsed 20
Single Pulse Avalanche Energy (Note 3) 60 mJ
Power Dissipation TA = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

A

= 25 °C (Note 1a) 2.5

A

1

A

W

°C/W

www.fairchildsemi.com

FDS86252 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 103 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2 3.4 4 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 10 V, ID = 4.5 A 13 S

I

= 250 μA, referenced to 25 °C -11 mV/°C

D

V

= 10 V, ID = 4.5 A 45 55

GS

= 6 V, ID = 3.7 A 57 80

GS

= 10 V, ID = 4.5 A, TJ = 125 °C 86 105

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 77 105 pF
Reverse Transfer Capacitance 3.3 5 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

718 955 pF

Gate Resistance 0.6 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.6 10 ns
Turn-Off Delay Time 14 24 ns

= 75 V, ID = 4.5 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2.9 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 3.5 nC

= 0 V to 5 V 5.2 9 nC

GS

V

DD

I

= 4.5 A

D

= 75 V

Gate to Drain “Miller” Charge 2.3 nC

9.2 19 ns

10.6 15 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting T

©2011 Fairchild Semiconductor Corporation
FDS86252 Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 74 118 nC

= 25 oC; N-ch: L = 1 mH, IAS = 11 A, VDD = 135 V, VGS = 10 V.

J

a) 50 °C/W whe n mounted on a

2

1 in

pad of 2 oz copper.

V

= 0 V, IS = 4.5 A (Note 2) 0.80 1.3

GS

= 0 V, IS = 2 A (Note 2) 0.76 1.2

V

GS

= 4.5 A, di/dt = 100 A/μs

I

F

2

θJC

60 95

is guaranteed by design while R

b) 125 °C/W when mounted on a
minimum pad.

V

ns

is determined by

θCA

www.fairchildsemi.com