Fairchild FDS86140 service manual
FDS86140
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
Max r
Max r
High performance trench technologh for extremely low r
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
= 9.8 mΩ at VGS = 10 V, ID = 11.2 A
DS(on)
= 16 mΩ at VGS = 6 V, ID = 9 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness
.
Applications
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Swith for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
March 2011
®
process that has
r
, switching performance and
DS(on)
FDS86140 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS86140 FDS86140 SO-8 13’’ 12
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous 11.2
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 264 mJ
Power Dissipation TC = 25 °C (Note 1) 5.0
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
mm 2500 units
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V 100 V
D
I
= 250 μA, referenced to 25 °C 70 mV/°C
D
= 80 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
= 10 V, ID = 11.2 A 8.19.8
V
GS
V
= 6 V, ID = 9 A 10.8 16
GS
= 10 V, I
V
GS
T
= 125 °C
J
= 10 V, ID = 11.2 A35S
DS
= 250 μA22.74V
D
= 11.2 A,
D
13.1 17
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 440 585 pF
Reverse Transfer Capacitance 20 30 pF
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
1940 2580 pF
mΩ
FDS86140 N-Channel PowerTrench
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On D elay Time
Rise Time 5.6 11 ns
Turn-Off Delay Time 23 38 ns
Fall Time 4.8 10 ns
To tal Gate Charge V
To tal Gate Charge V
Gate to Source Charge 8.0 nC
Gate to Drain “Miller” Charge 6.5 nC
= 50 V, ID = 11.2 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 5 V16.523nC
GS
GEN
Drain-Source Diode Characteristics
V
= 0 V, I
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 material. R
θJA
the user's board design.
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 59 94 nC
a) 50 °C/W wh en mounted on a
2
1 in
pad of 2 oz copper.
GS
= 0 V, IS = 2 A (Note 2) 0.7 1.2
V
GS
= 11.2 A, di/dt = 100 A/μs
I
F
= 11.2 A (Note 2) 0.8 1.3
S
= 6 Ω
V
DD
I
= 11.2 A
D
= 50 V,
is guaranteed by design while R
θJC
b) 125 °C/W when mounted on a
minimum pad.
13.7 25 ns
29 41 nC
53 85 ns
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 23 A, VDD = 90 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDS86140 Rev.C
2
www.fairchildsemi.com
Loading...