Fairchild FDS8447 service manual

tm

FDS8447
Single N-Channel PowerTrench® MOSFET

40V, 12.8A, 10.5mΩ

Features

 Max r

 Max r

 Low gate charge

 High performance trench technology for extremely low

r

DS(on)

 High power and current handling capability

 RoHS compliant

= 10.5mΩ at V

DS(on)

= 12.3mΩ at V

DS(on)

= 10V, ID = 12.8A

GS

= 4.5V, ID = 11.4A

GS

General Description

This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.

Applications

 DC - DC conversion

FDS8447 Single N-Channel PowerTrench

November 2006

®

D

D

D

D

SO-8

Pin 1

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 12.8

-Pulsed 50

Drain-Source Avalanche Energy (Note 3) 150 mJ

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b) 1

Operating and Storage Junction Temperature Range -55 to 150 °C

G

S

S

= 25°C unless otherwise noted

A

D

5

D

6

D

7

D

8

G

4

S

3

S

2

S

1

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 50

Thermal Resistance, Junction to Case (Note 1) 25

Package Marking and Ordering Information

®

MOSFET

A

W

°C/W

Device Marking Device Reel Size Tape Width Quantity

FDS8447 FDS8447 13’’ 12mm 2500 units

©2006 Fairchild Semiconductor Corporation
FDS8447 Rev. B

www.fairchildsemi.com1

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

FDS8447 Single N-Channel PowerTrench

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V, V

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.8 3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance VDS = 10V, ID = 12.8A 75.3 S

(Note 2)

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 250 350 pF

Reverse Transfer Capacitance 150 250 pF

Gate Resistance f = 1MHz 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 14 25 ns

Turn-Off D elay Time 27 42 ns

Fall Time 7 14 ns

Total Gate Charge at VGS = 10V

Total Gate Charge at VGS = 5V 19 27 nC

Gate to Source Gate Charge 6 nC

Gate to Drain “Miller”Charge 7 nC

ID = 250µA, referenced to 25°C 34 mV/°C

V

= 32V, V

DS

= 0V 1 µA

GS

TJ = 55°C 10 µA

= 0V ±100 nA

DS

ID = 250µA, referenced to 25°C -5 mV/°C

VGS = 10V, ID = 12.8A 9 10.5

mΩVGS = 4.5V, ID = 11.4A 10 12.3

VGS = 10V, ID = 12.8A,TJ = 125°C 13 15

VDS = 20V, VGS = 0V,

2000 2600 pF

f = 1MHz

VDD = 20V, ID = 12.8A
VGS = 10V, R

GEN

= 4.5Ω

11 20 ns

35 49 nC

VDS = 20V, ID = 12.8A,

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

θJA

drain pins. R

2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

3: Starting T

FDS8447 Rev.B www.fairchildsemi.com2

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 9.5 19 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

= 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V.

J

is determined by the user’s board design.

θJA

a) 50°C/W when
mounted on a 1in
pad of 2 oz copper

Scale 1:1 on letter size paper

and Maximum Ratings

= 0V, IS = 12.8A (note 2) 0.84 1.2 V

GS

IF = 12.8A, diF/dt = 100A/µs

2

19 29 ns

b) 125°C/W when mounted on a
minimum pad .