Fairchild FDS6910 service manual
September 2004
FDS6910
Dual N-Channel Logic Level PowerTrench
MOSFET
FDS6910
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been espec ially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 7.5 A, 30 V. R
R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
= 13 mΩ @ VGS = 10 V
DS(ON)
= 17 mΩ @ VGS = 4.5 V
DS(ON)
D1
D
D1
D
D2
D
D2
D
SO-8
G2
Pin 1
SO-8
S2
S
Absolute Maximum Ratings
G1
G
S1
S
S
TA=25oC unless otherwise noted
5
Q1
6
7
Q2
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 20
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
7.5 A
(Note 1a)
1.6
(Note 1b)
(Note 1c)
± 20
1.0
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6910 FDS6910 13’’ 12mm 2500 units
2004 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS6910 Rev BW)
FDS6910
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
DSS
I
Gate–Source Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Breakdown Voltage Temperature
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
= 24 V, VGS = 0 V, TJ = 55°C
V
DS
= ±20 V, VDS = 0 V
V
GS
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 7.5 A
V
= 4.5 V, ID = 6.5 A
GS
= 10 V, ID = 7.5 A,TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 5 V, ID = 7.5 A 36 S
30 V
28
1
10
±100
mV/°C
µA
nA
1 1.8 3 V
–4.7
10.6
13
14.5
13
17
20
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Revers e T rans fer Capacitance
rss
RG Gate Resistance
Switching Characteristics
t
Turn–On Delay Time
d(on)
(Note 2)
tr Turn–On Rise Time
t
Turn–Off Delay Time
d(off)
V
= 15 V, V
DS
= 0 V,
GS
f = 1.0 MHz
V
= 15 mV, f = 1.0 MHz
GS
V
= 15 V, ID = 1 A,
DD
V
= 10 V, R
GS
GEN
= 6 Ω
tf Turn–Off Fall Time
Q
Total Gate Charge at Vgs=10V 17 24 nC
g(TOT)
Qg Total Gate Charge at Vgs=5V 9 13 nC
Qgs Gate–Source Charge 3.1 nC
V
= 15 V, ID = 7.5 A,
DD
Qgd Gate–Drain Charge
1130 pF
300 pF
100 pF
2.4
9 18 ns
5 10 ns
26 42 ns
7 14 ns
Ω
2.7 nC
FDS6910 Rev B(W)
Loading...