Fairchild FDS6690AS service manual

FDS6690AS

30V N-Channel PowerTrench® SyncFET™

May 2008

FDS6690AS 30V N-Channel PowerTrench

tm

General Description

The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R

and low gate charge. The FDS6690AS

DS(ON)

includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.

Applications

• DC/DC converter

• Low side notebooks

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

o

=25

C unless otherwise noted

A

Features

• 10 A, 30 V. R
R

• Includes SyncFET Schottky diode

• Low gate charge (16nC typical)

• High performance trench technology for extremely low

R

DS(ON)

• High power and current handling capability

max= 12 mΩ @ VGS = 10 V

DS(ON)

max= 15 mΩ @ VGS = 4.5 V

DS(ON)

5
6
7
8

4
3
2
1

®

SyncFET™

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 10 A
– Pulsed 50
PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1c)

±20

1.2
1

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 50

(Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS6690AS FDS6690AS 13’’ 12mm 2500 units

©2008 Fairchild Semiconductor Corporation

FDS6690AS Rev A

°C/W
°C/W

2(X)

FDS6690AS 30V N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature
Coefficient

J

I

= 10 mA, Referenced to 25°C 30

D

= ±20 V, VDS = 0 V

V

GS

±100

mV/°C

µA
nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.6 3 V

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

D(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

= 10 mA, Referenced to 25°C

D

VGS = 10 V, ID = 10 A
V

= 4.5 V, ID = 8.5 A

GS

=10 V, ID =10A, TJ=125°C

V

GS

–4

10
12
15

12
15
19

mV/°C

mΩ

On–State Drain Current VGS = 10 V, VDS = 5 V 50 A

gFS Forward Transconductance VDS = 15 V, ID = 10 A 45 S

Dynamic Characteristics

C

Input Capacitance 910 pF

iss

C

Output Capacitance 270 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0

V

= 15 V, V

DS

f = 1.0 MHz

= 0 V,

GS

100 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 8 16 ns

d(on)

tr Turn–On Rise Time 5 10 ns
t

Turn–Off Delay Time 25 40 ns

d(off)

tf Turn–Off Fall Time
t

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 11 20 ns
t

Turn–Off Delay Time 15 27 ns

d(off)

tf Turn–Off Fall Time
Q

g

(TOT)

Total Gate Charge at Vgs=10V 16 23 nC
Qg Total Gate Charge at Vgs=5V 9 13 nC
Qgs Gate–Source Charge 2.3 nC
Qgd Gate–Drain Charge

V

= 15 V, ID = 1 A,

DS

= 10 V, R

V

GS

V

= 15 V, ID = 1 A,

DS

= 4.5 V, R

V

GS

V

= 15 V, ID = 10 A

DD

GEN

GEN

= 6 Ω

6 12 ns

= 6 Ω

8 16 ns

3.0 nC

®

SyncFET™

FDS6690AS Rev A2 (X)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

I

Maximum Continuous Drain–Source Diode Forward Current 3.5 A

S

VSD Drain–Source Diode Forward

Voltage

Trr Diode Reverse Recovery Time IF = 10A, 16 nS
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 9 nC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

θJA

drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = 3.5 A (Note 2)

0.6 0.7 V

FDS6690AS 30V N-Channel PowerTrench

a) 50°/W when

mounted on a 1 in2
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

b) 105°/W when

mounted on a .04 in2
pad of 2 oz copper

c) 125°/W when mounted on a

minimum pad.

®

SyncFET™

FDS6690AS Rev A2 (X)