Fairchild FDS6690A service manual
FDS6
690A
February 2007
FDS6690A
Single N-Channel, Logic-Level, PowerTrench
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
G
G
S
S
S
S
S
Features
• 11 A, 30 V. R
R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
• High power and current handling capability
MOSFET
DS(ON)
5
6
7
8
= 12.5 mΩ @ VGS = 10 V
DS(ON)
= 17.0 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
tm
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 50
PD
EAS Single Pulse Avalanche Energy
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
11 A
(Note 1a)
2.5
(Note 1b)
(Note 3)
96 mJ
±20
W
1.0
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6690A FDS6690A 13’’ 12mm 2500 units
2007 Fairchild Semiconductor Corporation
FDS6690A Rev E1 (W)
V
FDS6
690A
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
Coefficient
I
Gate–Body Leakage
GSS
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 10 A
VGS= 10 V, ID = 11 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
30 V
25
10
1 1.9
±100
3 V
–5
9.8
12.5
12.0
17.0
13.7
22.0
gFS Forward Transconductance VDS = 5 V, ID = 11 A 48 S
Dynamic Characteristics
C
Input Capacitance 1205 pF
iss
C
Output Capacitance 290
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.4
Switching Characteristics (Note 2)
t
Turn–On Delay Time 9 19 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 28 44 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 12 16 nC
Qgs Gate–Source Charge 3.4
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time 24 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
= 0 V,
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 11 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
IF = 11 A, diF/dt = 100 A/µs
(Note 2)
pF
115
pF
9 19 ns
nC
4.0
nC
0.74 1.2 V
27 nC
mV/°C
µA
µA
nA
mV/°C
mΩ
Ω
a) 50°C/W when mounted
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
= 8A,VDD = 30V, VGS = 10V
AS
on a 1in2 pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6690A Rev E1 (W)
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