Fairchild FDS6682 service manual
FDS6682
G
FDS6682
30V N-Channel PowerTrench MOSFET
February 2004
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
S
SO-8
Absolute Maximum Ratings T
S
S
=25oC unless otherwise noted
A
Features
• 14 A, 30 V. R
• Low gate charge (22 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
6
7
8
= 7.5 mΩ @ VGS = 10 V
DS(ON)
R
= 9.0 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 14 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +150
±20
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6682 FDS6682 13’’ 12mm 2500 units
2004 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS6682 Rev D(W)
Electrical Characteristics T
FDS6682
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30 V
23
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 12.5 A
VGS = 4.5 V, ID = 12.5 A, TJ=125°C
1 1.7 3 V
–5.6
5.7
6.6
8
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 14 A 70 S
7.5
9
11.5
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2310 pF
Output Capacitance 582 pF
Reverse Transfer Capacitance
VDS = 15 V, V
f = 1.0 MHz
GS
= 0 V,
237 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 10 20 ns
Turn–On Rise Time 7 14 ns
Turn–Off Delay Time 44 70 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 22 31 nC
Gate–Source Charge 6.4 nC
Gate–Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 14 A,
VGS = 5 V
16 29 ns
8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
is determined by the user's board design.
µA
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
FDS6682 Rev D(W)
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