Fairchild FDS6679AZ service manual
tm
FDS6679AZ
P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ
FDS6679AZ P-Channel PowerTrench
March 2009
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
D
D
D
D
G
S
SO-8
S
S
Features
Max r
Max r
Extended V
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely low
r
DS(on)
High power and current handing capability
RoHS Compliant
5
6
7
8
= 9.3mΩ at V
DS(on)
= 14.8mΩ at V
DS(on)
GS
= -10V, ID = -13A
GS
= -4.5V, ID = -11A
GS
range (-25V) for battery applications
4
3
2
1
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -30 V
Gate to Source Voltage ±25 V
Drain Current -Continuous (Note 1a) -13
-Pulsed -65
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1c) 1.0
Operating and Storage Temperature -55 to +150 °C
= 25°C unless otherwise noted
A
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
www.fairchildsemi.com1
A
W (Note 1b) 1.2
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25
°C
-20 mV/°C
Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 µA
Gate to Source Leakage Current VGS = ±25V, VDS=0V ±10 µA
FDS6679AZ P-Channel PowerTrench
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.9 -3 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS = -5V, ID = -13A 55 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 500 665 pF
Reverse Transfer Capacitance 495 745 pF
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 15 27 ns
Turn-Off Delay Time 210 336 ns
Fall Time 92 148 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 10 nC
Gate to Drain Charge 17 nC
ID = -250µA, referenced to
25
°C
6.5 mV/°C
VGS = -10V, ID = -13A 7.7 9.3
VGS = -4.5V, ID = -11A 11.8 14.8
VGS = -10V, ID = -13A,
TJ = 125°C
VDS = -15V, VGS = 0V,
10.7 13.4
2890 3845 pF
f = 1MHz
13 24 ns
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6Ω
VDS = -15V, VGS = -10V,
ID = -13A
VDS = -15V, VGS = -5V,
68 96 nC
38 54 nC
ID = -13A
mΩ
®
MOSFET
Drain-Source Diode Characteristic
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6679AZ Rev. B2
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V
Reverse Recovery Time IF = -13A, di/dt = 100A/µs 40 ns
Reverse Recovery Charge IF = -13A, di/dt = 100A/µs -31 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
is determined by the user’s board design.
θCA
b)105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when
mounted on a
minimun pad
www.fairchildsemi.com2©2009 Fairchild Semiconductor Corporation
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