Fairchild FDS6630A service manual

FDS6630A

N-Channel Logic Level PowerTrenchTM MOSFET

FDS6630A

April 1999

General Description

This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor drives

D

D

D

D

G

S

SO-8

pin

Absolute Maximum Ratings

S

1

S

TA = 25°C unless otherwise noted

Features

• 6.5 A, 30 V. R

R

= 0.038 Ω @ V

DS(on)

= 0.053 Ω @ V

DS(on)

= 10 V

GS

GS

= 4.5 V

• Low gate charge (5nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• High power and current handling capability .

5

6

7
8

4

3

2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 40

Power Dissipation for Si ngl e Operat i on

Operating and Storage Junction Temperature Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)

(Note 1c)

20 V

±

6.5 A

2.5 W

1.2
1

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case

(Note 1a)
(Note 1)

50
25

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS6630A FDS6630A 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

C

°

C/W

°

C/W

°

FDS6630A Rev. C1

FDS6630A

yp

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
Breakdown Voltage Temperature

DSS

Coefficient

J

ID = 250 µA, Referenced to 25°C24mV/

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA11.73V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = 250 µA, Referenced to 25°C-4mV/

VGS = 10 V, ID = 6.5 A
V

= 10 V, ID = 6.5 A, TJ=125°C

GS

V

= 4.5 V, ID = 5.5 A

GS

On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
Forward Transconductance VDS = 5 V, ID = 6.5 A 13 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 460 pF
Output Capacitance 115 pF

= 15 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.038

0.028

0.060

0.044

0.053

0.040

45 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn-On Delay Time 5 11 ns
Turn-On Rise Time 8 17 ns
Turn-Off Delay Time 17 28 ns
Turn-Off Fall Time
Total Gate Charge 5 7 nC
Gate-Source Charge 2 nC
Gate-Drain Charge

V

= 15 V, ID = 1 A,

DD

V

= 10 V, R

GS

= 5 V, ID = 6.5 A,

V

DS

= 5 V

V

GS

GEN

= 6

Ω

13 24 ns

0.9 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 1 in
pad of 2 oz. copper.

is determined by the user's board design.

θCA

2

b) 105° C/W when

mounted on a 0.04 in
pad of 2 oz. copper.

(Note 2)

2

0.8 1.2 V

c) 125° C/W on a 0.006 in2 pad
of 2 oz. copper.

FDS6630A Rev. C1