Fairchild FDS6612A service manual
tm
FDS6612A
Single N-Channel, Logic-Level, PowerTrench
MOSFET
FDS6612A Single N-Channel, Logic-Level, PowerTrench
April 2007
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
Symbol
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 40
PD
E
AS
TJ, T
STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range –55 to +150
Parameter Ratings Units
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 8.4 A, 30 V. R
R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 22 mΩ @ VGS = 10 V
DS(ON)
= 30 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
±20
(Note 1a)
8.4 A
(Note 1a)
2.5
(Note 1b)
(Note 3)
24
1.0
V
W
mJ
°C
MOSFET
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6612A FDS6612A 13’’ 12mm 2500 units
2007 Fairchild Semiconductor Corporation
°C/W
F
DS6612A Rev D1 (W)
FDS6612A Single N-Channel, Logic-Level, PowerTrench
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
Coefficient
I
Gate–Body Leakage
GSS
On Characteristics
V
Gate Threshold Voltage
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
(Note 2)
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 8.4 A
VGS = 4.5 V, ID = 7.2 A
VGS= 10 V, ID = 8.4 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 20 A
D(on)
30 V
26
10
1 1.9
–4.4
19
24
25
±100
3 V
22
30
37
gFS Forward Transconductance VDS = 15 V, ID = 8.4 A 30 S
Dynamic Characteristics
C
Input Capacitance 560
iss
C
Output Capacitance 140
oss
C
Reverse Transfer Capacitance
rss
VDS = 15 V, V
f = 1.0 MHz
= 0 V,
GS
55 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.5
Switching Characteristics
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 22 35 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 5.4 7.6 nC
Qgs Gate–Source Charge 1.7
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
3 6 ns
VDS = 15 V, ID = 8.4 A,
V
= 5 V
GS
1.9
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time 19 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
VGS = 0 V, IS = 2.1 A
IF = 8.4 A, diF/dt = 100 A/µs
is determined by the user's board design.
(Note 2)
0.77 1.2 V
9 nC
pF
pF
nC
nC
mV/°C
µA
µA
nA
mV/°C
mΩ
Ω
MOSFET
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3 Starting TJ = 25°C, L = 1mH, IAS = 7A, VDD = 27V, VGS = 10V
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6612A Rev D1 (W)
3.0V
4.5V
Typical Characteristics
FDS6612A Single N-Channel, Logic-Level, PowerTrench
40
VGS = 10V
30
6.0V
20
, DRAIN CURRENT (A)
D
10
I
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4.5V
4.0V
3.5V
2
VGS = 3.5V
1.8
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
0.8
4.0V
5.0V
1
0 10 20 30 40
ID, DRAIN CURRENT (A)
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 8.4A
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.1
0.08
0.06
0.04
, ON-RESISTANCE (OHM)
TA = 25oC
0.02
DS(ON)
R
0
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10V
ID = 4.2A
MOSFET
40
VDS = 5V
30
20
, DRAIN CURRENT (A)
D
I
10
0
1.5 2 2.5 3 3.5 4 4.5
TA = 125oC
-55oC
25oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
-55oC
FDS6612A Rev D1 (W)
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